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公开(公告)号:US06797340B2
公开(公告)日:2004-09-28
申请号:US10268195
申请日:2002-10-10
申请人: Hongbin Fang , Hyung-Suk A. Yoon , Ken Kaung Lai , Chi Chung Young , James Horng , Ming XI , Michael X. Yang , Hua Chung
发明人: Hongbin Fang , Hyung-Suk A. Yoon , Ken Kaung Lai , Chi Chung Young , James Horng , Ming XI , Michael X. Yang , Hua Chung
IPC分类号: C23C800
CPC分类号: C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.