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    Thermal stability improvement of CoSi2 film by stuffing in titanium
    3.
    发明授权
    Thermal stability improvement of CoSi2 film by stuffing in titanium 失效
    CoSi2薄膜通过填充钛的热稳定性提高

    公开(公告)号：US06383922B1

    公开(公告)日：2002-05-07

    申请号：US09872558

    申请日：2001-06-04

    申请人： Bei Chao Zhang ,  Chung Woh Lai ,  Eng Hua Lim ,  Mei Sheng Zhou ,  Peter Chew ,  Arthur Ang

    发明人： Bei Chao Zhang ,  Chung Woh Lai ,  Eng Hua Lim ,  Mei Sheng Zhou ,  Peter Chew ,  Arthur Ang

    IPC分类号： H01L21336

    CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/4933

    摘要： A method for forming a thermally stable cobalt disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A cobalt layer is deposited overlying the silicon regions to be silicided. A capping layer is deposited overlying the cobalt layer. The substrate is subjected to a first rapid thermal anneal whereby the cobalt is transformed to cobalt monosilicide where it overlies the silicon regions and wherein the cobalt not overlying the silicon regions is unreacted. The unreacted cobalt layer and the capping layer are removed. A titanium layer is deposited overlying the cobalt monosilicide layer. Thereafter the substrate is subjected to a second rapid thermal anneal whereby the cobalt monosilicide is transformed to cobalt disilicide. The titanium layer provides titanium atoms which diffuse into the cobalt disilicide thereby increasing its thermal stability. The titanium layer is removed to complete formation of a thermally stable cobalt disilicide film in the manufacture of an integrated circuit.

    摘要翻译： 描述了在制造集成电路中形成热稳定性二硅化二硅膜的方法。 提供具有要被硅化的硅区域的半导体衬底。 覆盖待硅化硅的区域上沉积钴层。 覆盖在钴层上的覆盖层。 对衬底进行第一快速热退火，由此将钴转化为单硅硅酸盐，其中它覆盖在硅区域上，并且其中不覆盖硅区域的钴是未反应的。 去除未反应的钴层和覆盖层。 沉积在一氧化硅钴层上的钛层。 此后，将衬底进行第二次快速热退火，由此使一价硅酸钴转化为二硅化钴。 钛层提供扩散到二硅化钴中的钛原子，从而增加其热稳定性。 去除钛层以在制造集成电路中完成热稳定的二硅化硅膜的形成。

    Method of cobalt silicidation using an oxide-Titanium interlayer
    4.
    发明授权
    Method of cobalt silicidation using an oxide-Titanium interlayer 失效
    使用氧化钛 - 中间层的硅化硅方法

    公开(公告)号：US06653227B1

    公开(公告)日：2003-11-25

    申请号：US09651963

    申请日：2000-08-31

    申请人： Chung Woh Lai ,  Beichao Zhang ,  Eng Hua Lim ,  Arthur Ang ,  Hai Jiang Peng ,  Charles Lin

    发明人： Chung Woh Lai ,  Beichao Zhang ,  Eng Hua Lim ,  Arthur Ang ,  Hai Jiang Peng ,  Charles Lin

    IPC分类号： H01L214763

    CPC分类号： H01L29/665 ,  H01L21/28518

    摘要： A new method for forming a high quality cobalt disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A thermal oxide layer is grown overlying the semiconductor substrate. A titanium layer is deposited overlying the thermal oxide layer. A cobalt layer is deposited overlying the titanium layer. A titanium nitride capping layer is deposited over the cobalt layer. The substrate is subjected to a first rapid thermal anneal whereby the cobalt is transformed to cobalt monosilicide where it overlies the silicon regions and wherein the cobalt not overlying the silicon regions is unreacted. The unreacted cobalt layer and the capping layer are removed. The substrate is subjected to a second rapid thermal anneal whereby the cobalt monosilicide is transformed to cobalt disilicide to complete formation of a cobalt disilicide film in the manufacture of an integrated circuit.

    摘要翻译： 描述了在制造集成电路中形成高质量二硅化二锡膜的新方法。 提供具有要被硅化的硅区域的半导体衬底。 生长在半导体衬底上的热氧化层。 沉积在热氧化物层上的钛层。 沉积在钛层上的钴层。 在钴层上沉积氮化钛覆盖层。 对衬底进行第一快速热退火，由此将钴转化为一钴硅酸盐，其中它覆盖在硅区域上，并且其中不覆盖硅区域的钴是未反应的。 去除未反应的钴层和覆盖层。 对基板进行第二快速热退火，由此在制造集成电路时，一氧化硅钴转化为二硅化钴以完成二硅化硅膜的形成。

    Post treatment of via opening by N-containing plasma or H-containing plasma for elimination of fluorine species in the FSG near the surfaces of the via opening
    5.
    发明授权
    Post treatment of via opening by N-containing plasma or H-containing plasma for elimination of fluorine species in the FSG near the surfaces of the via opening 失效
    通过含N等离子体或含H的等离子体通孔的后处理以消除通孔开口表面附近的FSG中的氟物质

    公开(公告)号：US06232217B1

    公开(公告)日：2001-05-15

    申请号：US09584429

    申请日：2000-06-05

    申请人： Arthur Ang ,  Xu Yi

    发明人： Arthur Ang ,  Xu Yi

    IPC分类号： H01L214763

    CPC分类号： H01L21/3105 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3144 ,  H01L21/31629 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

    摘要： A method of forming a metal interconnect within a fluorinated silica glass dielectric layer while preventing outgassing from the fluorinated silica glass dielectric layer comprising the following steps. A semiconductor structure having a semiconductor device structure formed therein is provided. A metal line is formed over the semiconductor structure. The metal line being electrically connected with the semiconductor device structure. An insulating layer is formed over the semiconductor structure, covering the metal line. A fluorinated silica glass dielectric layer is formed over the insulating layer. The fluorinated silica glass dielectric layer is planarized to form a planarized fluorinated silica glass dielectric layer. The planarized fluorinated silica glass dielectric layer and the insulating layer are patterned to form a via opening to the metal line, and exposing portions of the patterned fluorinated silica glass dielectric layer within the via opening. The via opening is treated with a plasma selected from the group comprising an N-containing plasma, an H-containing plasma, and a combination thereof. A metal interconnect is then formed within the via opening.

    摘要翻译： 在氟化石英玻璃电介质层内形成金属配线的方法，同时防止氟化石英玻璃介电层脱气，包括以下步骤。 提供了其中形成有半导体器件结构的半导体结构。 在半导体结构上形成金属线。 金属线与半导体器件结构电连接。 在半导体结构上形成绝缘层，覆盖金属线。 在绝缘层上形成氟化石英玻璃介电层。 氟化石英玻璃介电层被平坦化以形成平坦化的氟化石英玻璃介电层。 对平坦化的氟化石英玻璃介电层和绝缘层进行图案化，以形成通向金属线的通孔，并将图案化的氟化石英玻璃介电层的部分暴露于通孔开口内。 通孔开口用等离子体处理，该等离子体选自含有N的等离子体，含H的等离子体及其组合的组。 然后在通孔开口内形成金属互连。