公开(公告)号：US20220254877A1

公开(公告)日：2022-08-11

申请号：US17591016

申请日：2022-02-02

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Loucheng DAI ,  Chaofan SONG ,  Huiling ZUO ,  Jiang DU ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739

Abstract: A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.

公开(公告)号：US20220254907A1

公开(公告)日：2022-08-11

申请号：US17669080

申请日：2022-02-10

Applicant: Huawei Technologies Co., Ltd.

Inventor： Loucheng DAI ,  Wentao YANG ,  Huiling ZUO ,  Kang WANG ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/739 ,  H01L23/48 ,  H01L27/102

Abstract: An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n−x gate regions in the n gate regions are connected to the emitter region.