公开(公告)号：US20230411445A1

公开(公告)日：2023-12-21

申请号：US18459563

申请日：2023-09-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Kang WANG ,  Chaofan SONG ,  Lianghao WANG ,  Qian ZHAO ,  Loucheng DAI ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/0615 ,  H01L29/7397 ,  H01L29/66348

Abstract: A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.

公开(公告)号：US20220416783A1

公开(公告)日：2022-12-29

申请号：US17902007

申请日：2022-09-02

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhaozheng HOU ,  Xiaowei DONG ,  Nengchao QIU

IPC: H03K17/687 ,  H02H9/04

Abstract: Embodiments of this application disclose a drive circuit of a power device and a drive system, to drive the power device by using a small quantity of components. The drive circuit of the power device includes: a drive signal generation circuit, configured to generate a drive signal; a resistor and a capacitor that are connected in series, coupled to the drive signal generation circuit and the power device, and configured to control turn-on and turn-off of the power device based on the drive signal; and a voltage clamp circuit, coupled to the power device, and configured to control a gate voltage of the power device to be not greater than a gate withstand voltage.

公开(公告)号：US20170099005A1

公开(公告)日：2017-04-06

申请号：US15383614

申请日：2016-12-19

Applicant: Huawei Technologies Co., LTD

Inventor： Zhaozheng HOU ,  Xiaodong FAN ,  Jiebin CHENG ,  Zhihua LIU ,  Xuezhen ZHANG

IPC: H02M3/335 ,  H02M1/08

CPC classification number: H02M3/33546 ,  H02M1/08 ,  H02M3/33584 ,  H02M3/33592 ,  H02M3/3376 ,  H02M2001/0009 ,  H02M2001/0016 ,  H02M2001/0025 ,  Y02B70/1475

Abstract: A power source management method and a power source are provided. The method includes: comparing a feedforward control signal with a feedback control signal by using a logic control circuit, outputting the signals after the comparison, and performing matching, to obtain control signals of switching transistors of a full-bridge topology circuit; and adjusting the control signals of the switching transistors of the full-bridge topology circuit by using the logic control circuit, so that operating duty cycles of two bridge arms on a primary side match, are symmetric within one switch period of the logic control circuit, or match for a long time, to prevent transformer biasing. The power source management method and the power source can achieve good feedforward performance, suppress input disturbance, and additionally prevent transformer biasing, which ensures that the power source works normally.

公开(公告)号：US20220320271A1

公开(公告)日：2022-10-06

申请号：US17708268

申请日：2022-03-30

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhaozheng HOU ,  Yunbin GAO ,  Yiyu WANG ,  Fei HU

IPC: H01L29/06 ,  H01L29/16 ,  H01L23/498 ,  H01L29/872 ,  H01L23/31

Abstract: This application provides a power semiconductor device, which includes: a semiconductor substrate, where the semiconductor substrate is doped with a first-type impurity; an epitaxial layer, that is doped with the first-type impurity, the epitaxial layer is disposed on a surface of the semiconductor substrate, a first doped region doped with a second-type impurity is disposed on a first surface that is of the epitaxial layer and that is away from the semiconductor substrate, and a circumferential edge of the first surface of the epitaxial layer has a scribing region; a first metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, where the first metal layer is electrically connected to the epitaxial layer; a second metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate; and a passivation layer.

公开(公告)号：US20180308616A1

公开(公告)日：2018-10-25

申请号：US16022055

申请日：2018-06-28

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yuping GONG ,  Zhaozheng HOU ,  Junhe WANG

IPC: H01F27/24 ,  H01L23/492 ,  H01F27/30 ,  H01F3/14

CPC classification number: H01F27/24 ,  H01F3/14 ,  H01F17/04 ,  H01F27/306 ,  H01L23/492 ,  H01L23/49822 ,  H01L23/50 ,  H01L25/00 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: A system in package module assembly is provided, and includes: a substrate (10), and a chip (12), an inductor (15), and an electrical element (17) that are electrically connected to the substrate. The substrate includes a first surface (111), a second surface (112) opposite to the first surface, and an accommodation groove (113). The accommodation groove passes through the second surface and the first surface. The inductor includes a magnetic core (151) and an inductive coil (153). The magnetic core includes a base (154) and a protrusion (155) disposed on an outer surface of the base. The outer surface on which the protrusion is disposed and that is of the base abuts on the second surface. The protrusion is accommodated in the accommodation groove. The inductive coil is disposed in the protrusion. A system in package module and an electronic device are further provided.

公开(公告)号：US20150188417A1

公开(公告)日：2015-07-02

申请号：US14586088

申请日：2014-12-30

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhaozheng HOU ,  Ying Li

IPC: H02M3/04

CPC classification number: H02M3/04 ,  H02M3/157 ,  H02M2001/0022

Abstract: The present invention discloses a control apparatus applied to a digital power supply device, and a digital power supply device, and pertains to the digital power field. The control apparatus includes: an operational amplifier, an analog to digital converter, a feedback digital filter, a digital pulse-width modulator, a power-level circuit, a feedforward digital filter, and a feedback network. A feedforward function is achieved by configuring a feedforward digital filter, which reduces the number of tables that are used to implement a reciprocal curve, and avoids problems of a long operational delay, a huge resource waste, and a poor feedforward effect.

Abstract translation: 本发明公开了一种应用于数字电源装置和数字电源装置的控制装置，涉及数字电源领域。 控制装置包括：运算放大器，模数转换器，反馈数字滤波器，数字脉宽调制器，功率电平电路，前馈数字滤波器和反馈网络。 通过配置前馈数字滤波器来实现前馈功能，前馈数字滤波器减少了用于实现互逆曲线的表格数量，避免了长时间的操作延迟，巨大的资源浪费和不良的前馈效应等问题。

公开(公告)号：US20230219269A1

公开(公告)日：2023-07-13

申请号：US18183988

申请日：2023-03-15

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Fankun WU ,  Zhen LV ,  Zhaozheng HOU

IPC: B29C45/36 ,  B29C45/28 ,  B29C45/26 ,  B29C45/14

CPC classification number: B29C45/36 ,  B29C45/28 ,  B29C45/2608 ,  B29C45/14065 ,  B29C2045/14147 ,  B29L2031/34

Abstract: An injection mold and an injection molding method are provided. The injection mold includes a housing and a cover. The housing is provided with a mold cavity. The mold cavity is configured to accommodate a power module. The cover is provided with a plurality of vias. The cover is detachably connected to the housing. The cover is located in the mold cavity and locates the power module jointly with the housing. The plurality of vias are configured to match a plurality of pins of the power module. In this application, the cover is disposed, and the cover is provided with the vias for pins to pass through. By using covers with different arrangement manners of vias, a same set of injection molds can be compatible with power modules of a same series that have different locations of pins. Arrangement manners of vias on different covers are different.

公开(公告)号：US20230215788A1

公开(公告)日：2023-07-06

申请号：US18183367

申请日：2023-03-14

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wengang LUO ,  Zhaozheng HOU ,  Junhe WANG

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L23/498 ,  H01L25/07

CPC classification number: H01L23/49575 ,  H01L23/49562 ,  H01L23/3121 ,  H01L23/49568 ,  H01L21/4846 ,  H01L23/49811 ,  H01L23/49579 ,  H01L25/072

Abstract: A power module (10) and a manufacturing method thereof are disclosed. The power module (10) includes a power assembly (11) and a drive board (12). The power assembly (11) includes a substrate (111), a power chip (112), and a package body (113). The power chip (112) is disposed on a mounting surface (1110) of the substrate (111). The package body (113) packages the power chip (112) on the substrate (111). The drive board (12) is disposed in the package body (113) and is located on a side, of the power chip (112), that backs the mounting surface (1110). The drive board (12) is electrically connected to the power chip (112). In the power module, a parasitic parameter between the drive board (12) and the power assembly (11) can be reduced, thereby improving electrical performance of the power module (10).

公开(公告)号：US20220254907A1

公开(公告)日：2022-08-11

申请号：US17669080

申请日：2022-02-10

Applicant: Huawei Technologies Co., Ltd.

Inventor： Loucheng DAI ,  Wentao YANG ,  Huiling ZUO ,  Kang WANG ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/739 ,  H01L23/48 ,  H01L27/102

Abstract: An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n−x gate regions in the n gate regions are connected to the emitter region.

公开(公告)号：US20220199795A1

公开(公告)日：2022-06-23

申请号：US17695539

申请日：2022-03-15

Applicant: Huawei Technologies Co., Ltd.

Inventor： Boning HUANG ,  Zhaozheng HOU ,  Qimeng JIANG

IPC: H01L29/423 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  H03K17/284

Abstract: This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride GaN buffer layer formed on the substrate; an aluminum gallium nitride AlGaN barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride P-GaN cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P-GaN cap layer. A Schottky contact is formed between the first gate metal and the P-GaN cap layer, and an ohmic contact is formed between the second gate metal and the P-GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit. In addition, the gallium nitride component has a hybrid gate structure that includes a Schottky gate and an ohmic gate, so that not only gate leakage currents in a conduction process can be reduced to reduce driving power consumption, but also a large quantity of electron holes can be injected into the AlGaN barrier layer during conduction to optimize a dynamic resistance, thereby improving component reliability.