Memory, Memory Use Method, Memory Manufacturing Method, and Electronic Device

    公开(公告)号:US20240331739A1

    公开(公告)日:2024-10-03

    申请号:US18741084

    申请日:2024-06-12

    CPC classification number: G11C5/063 G11C7/1048

    Abstract: This disclosure discloses a memory, a memory use method, a memory manufacturing method, and an electronic device. The memory includes a control layer and at least one storage layer stacked on the control layer. The storage layer includes a plurality of storage channels, and each storage channel includes an independent data interface bus. The control layer includes a plurality of controllers and a plurality of user interfaces, the controller is configured to access data stored in a storage channel connected to the controller. The plurality of controllers are connected to the data interface buses of the plurality of storage channels in one-to-one correspondence. A quantity of user interfaces is the same as a quantity of user storage channels that can be invoked by a user. The quantity of user interfaces is less than a quantity of controllers.

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