公开(公告)号：US20240220339A1

公开(公告)日：2024-07-04

申请号：US18288701

申请日：2022-03-30

Applicant: Huawei Technologies Co., Ltd.

Inventor： Bo Zhang ,  Zezhi Wang ,  Zhibin Chen ,  Zhiqun Zhang

IPC: G06F9/54 ,  H04L51/224

CPC classification number: G06F9/542 ,  G06F9/546 ,  H04L51/224

Abstract: A message reminding method and a terminal device are provided. The method includes: A first application receives a first message sent by a second application. The first message includes an identifier of the second application. The second application is an application that receives a new message. The first application and the second application are applications in a system carried by a simulator. The first application sends a second message to a simulator application. The second message includes the identifier of the second application. The second message indicates the simulator to determine whether to perform reminding on the new message received by the second application. According to the method, reminding may be implemented when an application in the simulator receives a new message, so that a user can view and process the message.

公开(公告)号：US20230026388A1

公开(公告)日：2023-01-26

申请号：US17936380

申请日：2022-09-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhibin Chen

IPC: H01L29/778 ,  H01L29/20

Abstract: This disclosure provides a semiconductor epitaxial structure and a semiconductor device. The semiconductor epitaxial structure includes a channel layer, a composite barrier layer, and a doping layer. The doping layer is disposed on the composite barrier layer, the channel layer is disposed on a side of the composite barrier layer that faces away from the doping layer, the composite barrier layer includes a digital alloy barrier layer and an AlGaN barrier layer that are disposed in a laminated manner, and the digital alloy barrier layer includes one or more AlN layers. The semiconductor epitaxial structure provided in this disclosure effectively prevents Mg ions in a p-GaN layer from diffusing to the barrier layer and the channel layer to affect density and mobility of two-dimensional electronic gas and cause a problem of an increase in on resistance.

公开(公告)号：US20230337300A1

公开(公告)日：2023-10-19

申请号：US18043211

申请日：2021-08-12

Applicant: Huawei Technologies Co., Ltd.

Inventor： Gang Chen ,  Mingkun Zhang ,  Zhibin Chen ,  Qingbin Meng

IPC: H04W76/14 ,  H04W4/80

CPC classification number: H04W76/14 ,  H04W4/80

Abstract: This application provides a Bluetooth communication method and an electronic device. The method includes: A first operating system in a first device may establish a first Bluetooth connection between the first device and a second device by using an HCI channel and a second operating system. This provides a possibility for the first operating system of the first device to perform Bluetooth communication with the second device, and helps a container of the first device to communicate with the second device.

公开(公告)号：US20230290742A1

公开(公告)日：2023-09-14

申请号：US18189581

申请日：2023-03-24

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhibin Chen ,  Ruihong Luo

IPC: H01L23/00 ,  H01L21/02 ,  H01L29/20 ,  H01L29/15 ,  C30B25/18 ,  C30B29/40 ,  C30B29/68

CPC classification number: H01L23/562 ,  C30B25/183 ,  C30B29/68 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02458 ,  H01L21/02507 ,  H01L29/155 ,  H01L29/2003

Abstract: A nitride epitaxial structure is provided, including: a substrate; a nucleation layer, formed on the substrate, where the nucleation layer is an aluminum nitride layer or a gallium nitride layer; a buffer layer, formed on the nucleation layer, including K stacked group-III nitride double-layer structures, K ≥ 3, each double-layer structure includes an upper layer and a lower layer that are stacked, a band gap difference of each double-layer structure is a difference between a band gap of a material of the upper layer and a band gap of a material of the lower layer, and band gap differences of the K double-layer structures generally present a gradient trend along a thickness direction of the buffer layer; and an epitaxial layer, formed on the buffer layer, where a material of the epitaxial layer includes group-III nitride. A semiconductor device is further provided, including the nitride epitaxial structure.