HIGH-SYMMETRICAL SEMICONDUCTOR ARRANGEMENT
    1.
    发明公开

    公开(公告)号:US20240006330A1

    公开(公告)日:2024-01-04

    申请号:US18469355

    申请日:2023-09-18

    Abstract: The present disclosure relates to a semiconductor arrangement, comprising: a substrate; a first group of semiconductor elements forming a first switch; a second group of semiconductor elements forming a second switch. The substrate comprises: a first electrically conductive area; a second electrically conductive area; a third electrically conductive area; a fourth electrically conductive area. The semiconductor arrangement further comprises: a first electrical connection line; a second electrical connection line; and a third electrical connection line. The first electrical connection line, the second electrical connection line, the third electrical connection line and the fourth area of the substrate are dimensioned according to a symmetry criterion to enable a simultaneous current flow through the load paths of the semiconductor elements of the first group as well as a simultaneous current flow through the load paths of the semiconductor elements of the second group.

    Encapsulation Structure and Encapsulation Method of Power Module

    公开(公告)号:US20230268251A1

    公开(公告)日:2023-08-24

    申请号:US17818518

    申请日:2022-08-09

    Abstract: An encapsulation structure of a power module is disclosed in this application, which includes a power module and a liquid cooler. The power module includes a power module body, a metal baseplate, and heat dissipation finned tubes. A front side of the metal baseplate is connected to the power module body, and a back side of the metal baseplate is connected to the heat dissipation finned tubes. The metal baseplate has a protrusion part protruding. There are a plurality of grooves on a fluid pipe of the liquid cooler, a cavity exists between two adjacent grooves of the plurality of grooves, and the cavity is configured to communicate the two adjacent grooves. The power module body is lapped on the groove, a back side of the protrusion part is in contact with an edge surface of the groove, and the heat dissipation finned tubes are placed in the groove.

    SUBSTRATE, PACKAGED STRUCTURE, AND ELECTRONIC DEVICE

    公开(公告)号:US20230230928A1

    公开(公告)日:2023-07-20

    申请号:US18189622

    申请日:2023-03-24

    CPC classification number: H01L23/5386 H01L23/5383 H01L24/48 H01L2224/48157

    Abstract: A substrate, a packaged structure, and an electronic device are provided. The substrate is configured to be electrically connected to a chip. The chip includes a power terminal and a signal terminal. The substrate includes a first substrate and a second substrate mounted on the first substrate. The first substrate includes a first layout, and the first layout is configured to be electrically connected to the power terminal. The second substrate includes a second layout, and the second layout is configured to be electrically connected to the signal terminal. A spacing between lines of the second layout is less than a spacing between lines of the first layout. The substrate provided in this application has a small size and high integration.

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