摘要:
A method and system for creating a histogram of oriented occurrences (HO2) is disclosed. A plurality of entities in at least one image are detected and tracked. One of the plurality of entities is designated as a reference entity. A local 2-dimensional ground plane coordinate system centered on and oriented with respect to the reference entity is defined. The 2-dimensional ground plane is partitioned into a plurality of non-overlapping bins, the bins forming a histogram, a bin tracking a number of occurrences of an entity class. An occurrence of at least one other entity of the plurality of entities located in the at least one image may be associated with one of the plurality of non-overlapping bins. A number of occurrences of entities of at least one entity class in at least one bin may be into a vector to define an HO2 feature.
摘要:
A method and system for creating a histogram of oriented occurrences (HO2) is disclosed. A plurality of entities in at least one image are detected and tracked. One of the plurality of entities is designated as a reference entity. A local 2-dimensional ground plane coordinate system centered on and oriented with respect to the reference entity is defined. The 2-dimensional ground plane is partitioned into a plurality of non-overlapping bins, the bins forming a histogram, a bin tracking a number of occurrences of an entity class. An occurrence of at least one other entity of the plurality of entities located in the at least one image may be associated with one of the plurality of non-overlapping bins. A number of occurrences of entities of at least one entity class in at least one bin may be into a vector to define an HO2 feature.
摘要:
Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.
摘要:
An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.