System and method for multi-agent event detection and recognition
    1.
    发明授权
    System and method for multi-agent event detection and recognition 有权
    多代理事件检测和识别的系统和方法

    公开(公告)号:US09569531B2

    公开(公告)日:2017-02-14

    申请号:US12489667

    申请日:2009-06-23

    摘要: A method and system for creating a histogram of oriented occurrences (HO2) is disclosed. A plurality of entities in at least one image are detected and tracked. One of the plurality of entities is designated as a reference entity. A local 2-dimensional ground plane coordinate system centered on and oriented with respect to the reference entity is defined. The 2-dimensional ground plane is partitioned into a plurality of non-overlapping bins, the bins forming a histogram, a bin tracking a number of occurrences of an entity class. An occurrence of at least one other entity of the plurality of entities located in the at least one image may be associated with one of the plurality of non-overlapping bins. A number of occurrences of entities of at least one entity class in at least one bin may be into a vector to define an HO2 feature.

    摘要翻译: 公开了一种用于创建定向事件直方图(HO2)的方法和系统。 检测并跟踪至少一个图像中的多个实体。 多个实体之一被指定为参照实体。 定义以参考实体为中心并定向的局部二维地面坐标系。 二维接地平面被划分成多个不重叠的箱体,该箱体形成一个直方图,一个箱子跟踪一个实体类的出现次数。 位于所述至少一个图像中的所述多个实体中的至少一个其他实体的出现可以与所述多个非重叠区域中的一个相关联。 在至少一个箱中的至少一个实体类的实体的多个出现可以被转换为向量以定义HO2特征。

    SYSTEM AND METHOD FOR MULTI-AGENT EVENT DETECTION AND RECOGNITION
    2.
    发明申请
    SYSTEM AND METHOD FOR MULTI-AGENT EVENT DETECTION AND RECOGNITION 有权
    用于多事件事件检测和识别的系统和方法

    公开(公告)号:US20090319560A1

    公开(公告)日:2009-12-24

    申请号:US12489667

    申请日:2009-06-23

    IPC分类号: G06F17/30

    摘要: A method and system for creating a histogram of oriented occurrences (HO2) is disclosed. A plurality of entities in at least one image are detected and tracked. One of the plurality of entities is designated as a reference entity. A local 2-dimensional ground plane coordinate system centered on and oriented with respect to the reference entity is defined. The 2-dimensional ground plane is partitioned into a plurality of non-overlapping bins, the bins forming a histogram, a bin tracking a number of occurrences of an entity class. An occurrence of at least one other entity of the plurality of entities located in the at least one image may be associated with one of the plurality of non-overlapping bins. A number of occurrences of entities of at least one entity class in at least one bin may be into a vector to define an HO2 feature.

    摘要翻译: 公开了一种用于创建定向事件直方图(HO2)的方法和系统。 检测并跟踪至少一个图像中的多个实体。 多个实体之一被指定为参照实体。 定义以参考实体为中心并定向的局部二维地面坐标系。 二维接地平面被划分成多个不重叠的箱体,该箱体形成一个直方图,一个箱子跟踪一个实体类的出现次数。 位于所述至少一个图像中的所述多个实体中的至少一个其他实体的出现可以与所述多个非重叠区域中的一个相关联。 在至少一个箱中的至少一个实体类的实体的多个出现可以被转换为向量以定义HO2特征。

    SENSOR AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
    传感器及其制造方法

    公开(公告)号:US20140077212A1

    公开(公告)日:2014-03-20

    申请号:US13984626

    申请日:2012-11-15

    IPC分类号: H01L27/146

    摘要: Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.

    摘要翻译: 本发明的实施例公开了一种传感器及其制造方法,该传感器包括排列成阵列的多个检测单元,每个检测单元包括薄膜晶体管器件和光电二极管传感器器件,光电二极管传感器器件包括: 与该薄膜晶体管器件的漏极连接的接收电极,位于接收电极上并覆盖薄膜晶体管器件的光电二极管上的透明电极和与透明电极连接的偏置线。

    Oxide Semiconductor Thin Film Transistor, Manufacturing Method, And Display Device Thereof
    4.
    发明申请
    Oxide Semiconductor Thin Film Transistor, Manufacturing Method, And Display Device Thereof 有权
    氧化物半导体薄膜晶体管,制造方法及其显示装置

    公开(公告)号:US20140103334A1

    公开(公告)日:2014-04-17

    申请号:US13983868

    申请日:2013-02-27

    摘要: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.

    摘要翻译: 公开了一种氧化物半导体薄膜晶体管,其制造方法和显示装置。 一种氧化物半导体薄膜晶体管,包括栅极绝缘层(22),氧化物半导体层(24)和阻挡层(25),其中第一过渡层(23)形成在栅极绝缘层(22)和 氧化物半导体层(24)中,第一过渡层(23)的氧含量高于氧化物半导体层(24)的氧含量。 氧化物半导体薄膜晶体管增强了氧化物半导体层(24)和阻挡层(25)之间的界面特性和晶格匹配,以更好地提高薄膜晶体管的稳定性。