公开(公告)号：US06495479B1

公开(公告)日：2002-12-17

申请号：US09566287

申请日：2000-05-05

申请人： Hui-Jung Wu ,  James S Drage ,  Lisa Brungardt ,  Teresa A. Ramos ,  Douglas M. Smith

发明人： Hui-Jung Wu ,  James S Drage ,  Lisa Brungardt ,  Teresa A. Ramos ,  Douglas M. Smith

IPC分类号： H01L21469

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96

摘要： A nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with processes for producing these improved films. The films are produced by a process that includes (a) preparing a silicon-based, precursor composition including a porogen, (b) coating a substrate with the silicon-based precursor to form a film, (c) aging or condensing the film in the presence of water, (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.

摘要翻译： 提供了可用于制造半导体器件，集成电路等的纳米多孔介电膜，以及用于制造这些改进的膜的方法。 通过包括（a）制备包含致孔剂的硅基前体组合物的方法制备薄膜，（b）用硅基前体涂覆基材以形成薄膜，（c）将薄膜老化或冷凝 水的存在，（d）在有效去除基本上全部所述致孔剂的温度和持续时间加热胶凝膜，并且其中所施加的前体组合物在液体或蒸汽形式的水存在下基本上老化或冷凝， 无需外部加热或暴露于外部催化剂。