公开(公告)号：US20140016659A1

公开(公告)日：2014-01-16

申请号：US14001260

申请日：2012-02-24

申请人： Huiyun Liu ,  Alwyn John Seeds ,  Francesca Pozzi

发明人： Huiyun Liu ,  Alwyn John Seeds ,  Francesca Pozzi

IPC分类号： H01L29/267 ,  H01S5/30

CPC分类号： H01L29/267 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01S5/0014 ,  H01S5/0218 ,  H01S5/06216 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3412 ,  H01S2301/173

摘要： A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10−8torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.

摘要翻译： 公开了一种半导体器件，包括：具有包含锗的表面的衬底; 所述表面上的一层镓; 和镓覆盖表面上的一层砷化镓。 通过以下步骤制造锗上的砷化镓的半导体异质结构：在具有小于10-8托的砷分压的环境中通过快门保护包含锗的表面; 在所述表面暴露之后立即在所述表面上外延生长一层镓; 并在镓覆盖的表面上外延生长一层砷化镓。

公开(公告)号：US09401404B2

公开(公告)日：2016-07-26

申请号：US14001260

申请日：2012-02-24

申请人： Huiyun Liu ,  Alwyn John Seeds ,  Francesca Pozzi

发明人： Huiyun Liu ,  Alwyn John Seeds ,  Francesca Pozzi

IPC分类号： H01S5/00 ,  H01L29/267 ,  H01L21/02 ,  H01S5/02 ,  H01S5/34 ,  H01S5/30 ,  H01S5/062 ,  H01S5/20 ,  H01S5/22 ,  B82Y40/00

CPC分类号： H01L29/267 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01S5/0014 ,  H01S5/0218 ,  H01S5/06216 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3412 ,  H01S2301/173

摘要： A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10−8torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.

摘要翻译： 公开了一种半导体器件，包括：具有包含锗的表面的衬底; 所述表面上的一层镓; 和镓覆盖表面上的一层砷化镓。 通过以下步骤制造锗上的砷化镓的半导体异质结构：在具有小于10-8托的砷分压的环境中通过快门保护包含锗的表面; 在所述表面暴露之后立即在所述表面上外延生长一层镓; 并在镓覆盖的表面上外延生长一层砷化镓。