公开(公告)号：US09153600B2

公开(公告)日：2015-10-06

申请号：US13618308

申请日：2012-09-14

申请人： Hye Young Ryu ,  Hee Jun Byeon ,  Woo Geun Lee ,  Kap Soo Yoon ,  Yoon Ho Kim ,  Chun Won Byun

发明人： Hye Young Ryu ,  Hee Jun Byeon ,  Woo Geun Lee ,  Kap Soo Yoon ,  Yoon Ho Kim ,  Chun Won Byun

IPC分类号： G02F1/1343 ,  G02F1/1362 ,  H01L27/12

CPC分类号： H01L27/127 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136222 ,  G02F2001/136295 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262

摘要： A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板及其制造方法在由有机绝缘体形成的第二钝化层中形成接触孔，通过用由保护构件形成的保护构件覆盖来保护接触孔的一侧 与第一场产生电极相同的层并由透明导电材料形成，并且使用保护构件作为掩模，将第二钝化层下面的第一钝化层蚀刻。 因此，可以防止由有机绝缘体形成的第二钝化层在蚀刻第二钝化层下方的绝缘层的同时进行过蚀刻，从而防止接触孔过宽。