利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

69 条记录 (耗时 0.017 秒)

    Metal line, method of forming the same, and a display using the same
    2.
    发明授权
    Metal line, method of forming the same, and a display using the same 失效
    金属线，其形成方法和使用其的显示器

    公开(公告)号：US08174660B2

    公开(公告)日：2012-05-08

    申请号：US12332249

    申请日：2008-12-10

    申请人： Sung Ryul Kim ,  Yong-Mo Choi ,  Sung-Hoon Yang ,  Hwa-Yeul Oh ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Seong-Hun Kim

    发明人： Sung Ryul Kim ,  Yong-Mo Choi ,  Sung-Hoon Yang ,  Hwa-Yeul Oh ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Seong-Hun Kim

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  Y10T428/24975

    摘要： Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device.

    摘要翻译： 提供一种金属线，其形成方法和使用该线的显示器。 为了增加具有CuO / Cu多层结构的金属线的电阻并防止起泡形成，使用含氮气体和含硅气体或使用氢或氩作为含硅气体进行等离子体处理 。 因此，在铜层上薄膜地形成诸如SiN x或Si层的等离子体处理层，从而防止铜层的电阻增加，并且还防止由氧化铜层损坏引起的起泡形成。 因此，可以提高铜线的可靠性，从而提高装置的可靠性。

    LIQUID CRYSTAL DISPLAY
    3.
    发明申请
    LIQUID CRYSTAL DISPLAY 有权
    液晶显示器

    公开(公告)号：US20100053486A1

    公开(公告)日：2010-03-04

    申请号：US12536693

    申请日：2009-08-06

    申请人： Seung-Hwan Shim ,  Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong

    发明人： Seung-Hwan Shim ,  Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong

    IPC分类号： G02F1/1343 ,  G02F1/1368

    CPC分类号： G02F1/1368 ,  G02F1/136213 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

    摘要： A liquid crystal display (LCD) includes a gate wiring, a first insulating substrate, an oxide active layer pattern, a data wiring, a floating electrode, and an upper gate electrode. The gate wiring includes a gate line formed on the first insulating substrate and a lower gate electrode extending from the gate line. The oxide active layer pattern is formed on the gate wiring. The data wiring includes a data line intersecting the gate line. The floating electrode generates a coupling capacitance by overlapping the gate wiring. The upper gate electrode is capacitively coupled to the lower gate electrode.

    摘要翻译： 液晶显示器（LCD）包括栅极布线，第一绝缘基板，氧化物活性层图案，数据布线，浮动电极和上部栅电极。 栅极布线包括形成在第一绝缘基板上的栅极线和从栅极线延伸的下部栅电极。 氧化物有源层图案形成在栅极布线上。 数据线包括与栅极线相交的数据线。 浮动电极通过重叠栅极布线而产生耦合电容。 上栅电极电容耦合到下栅电极。

    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号：US20100019996A1

    公开(公告)日：2010-01-28

    申请号：US12486542

    申请日：2009-06-17

    申请人： Chun-Gi YOU ,  Kap-Soo YOON ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Jae-Ho CHOI

    发明人： Chun-Gi YOU ,  Kap-Soo YOON ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Jae-Ho CHOI

    IPC分类号： G09G3/30 ,  H01L21/00

    CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/7869

    摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

    摘要翻译： 显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案， 电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

    THIN FILM TRANSISTOR ARRAY SUBSTRATE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND METHOD OF MANUFACTURING THE SAME 有权
    具有改进的电气特性的薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US20090184315A1

    公开(公告)日：2009-07-23

    申请号：US12355646

    申请日：2009-01-16

    申请人： Je-Hun Lee ,  Kap-Soo Yoon ,  Kyung-Seok Son ,  Do-Hyun Kim ,  Chang-Oh Jeong

    发明人： Je-Hun Lee ,  Kap-Soo Yoon ,  Kyung-Seok Son ,  Do-Hyun Kim ,  Chang-Oh Jeong

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1296 ,  H01L29/4908

    摘要： A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.

    摘要翻译： 提供了可以具有高电荷迁移率并且可以实现宽显示装置的均匀电特性的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板包括具有通道并形成在绝缘基板上的氧化物半导体层，与氧化物半导体层重叠的栅极电极，设置在氧化物半导体层和栅电极之间的栅极绝缘膜，以及形成的钝化膜 在氧化物半导体层和栅电极上。 栅极绝缘膜和钝化膜中的至少一个含有含氟硅。

    Method for manufacturing half-metallic magnetic oxide and plasma sputtering apparatus used in the same
    6.
    发明授权
    Method for manufacturing half-metallic magnetic oxide and plasma sputtering apparatus used in the same 失效
    用于制造其中使用的半金属磁性氧化物和等离子体溅射装置的方法

    公开(公告)号：US06802949B2

    公开(公告)日：2004-10-12

    申请号：US10269865

    申请日：2002-10-15

    申请人： Jin Pyo Hong ,  Chang Hyo Lee ,  Chae Ok Kim ,  Kap Soo Yoon ,  Sung Bok Lee

    发明人： Jin Pyo Hong ,  Chang Hyo Lee ,  Chae Ok Kim ,  Kap Soo Yoon ,  Sung Bok Lee

    IPC分类号： C23C1435

    CPC分类号： H01J37/3447 ,  C23C14/0036 ,  C23C14/085 ,  C23C14/3471 ,  H01J37/3402

    摘要： Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

    摘要翻译： 公开了一种制造半金属磁性氧化物的方法和用于该方法的等离子体溅射装置。 设置有至少一个孔的导体设置在等离子体溅射装置中的金属靶和衬底保持器之间，从而改善从金属靶释放的金属离子与氧离子的结合，以及矫顽力大于 在基板上形成薄膜的薄膜，从而获得具有优异性能的磁性氧化膜。 在本发明的优选实施例中，导体侧电源单元连接到导体，从而另外向导体供电并产生第二等离子体。 等离子体溅射装置提供高功率以分解氧气，并通过附加电源以精确的比例以不同电价排出金属离子，从而有效地用于在低温下制造半金属氧化物。

    Display substrate, method of manufacturing the same
    7.
    发明授权
    Display substrate, method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号：US09570621B2

    公开(公告)日：2017-02-14

    申请号：US12977853

    申请日：2010-12-23

    申请人： Ki-Hun Jeong ,  Do-Hyun Kim ,  Dong-Hoon Lee ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Sung-Hoon Yang ,  Pil-Sang Yun ,  Seung-Mi Seo

    发明人： Ki-Hun Jeong ,  Do-Hyun Kim ,  Dong-Hoon Lee ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Sung-Hoon Yang ,  Pil-Sang Yun ,  Seung-Mi Seo

    IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78633

    摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

    摘要翻译： 本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 与所述氧化物半导体层的沟道区域重叠的保护层; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 漏电极，与所述氧化物半导体层的第二侧接触，并跨过所述沟道区面对所述源电极; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

    Thin-film transistor, array substrate having the same and method of manufacturing the same
    8.
    发明授权
    Thin-film transistor, array substrate having the same and method of manufacturing the same 有权
    薄膜晶体管，具有相同的阵列基板及其制造方法

    公开(公告)号：US08772897B2

    公开(公告)日：2014-07-08

    申请号：US13049783

    申请日：2011-03-16

    申请人： Ki-Won Kim ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

    发明人： Ki-Won Kim ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

    IPC分类号： H01L27/146

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78645 ,  H01L29/78648

    摘要： A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

    摘要翻译： 薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案，源电极和漏电极电绝缘。