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    PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING
    8.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20110024399A1

    公开(公告)日：2011-02-03

    申请号：US12936671

    申请日：2009-04-06

    申请人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    发明人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67751 ,  H01L21/68742

    摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

    摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。

    Plasma processing apparatus and method for plasma processing
    10.
    发明授权
    Plasma processing apparatus and method for plasma processing 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08373086B2

    公开(公告)日：2013-02-12

    申请号：US12936671

    申请日：2009-04-06

    申请人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    发明人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67751 ,  H01L21/68742

    摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

    摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。