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    Method of forming semiconductor devices
    3.
    发明授权
    Method of forming semiconductor devices 有权
    形成半导体器件的方法

    公开(公告)号：US07842582B2

    公开(公告)日：2010-11-30

    申请号：US12468666

    申请日：2009-05-19

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/76224 ,  H01L27/11521

    摘要： A method of forming semiconductor devices includes providing a semiconductor substrate in which gate insulating patterns and first conductive patterns are formed, performing a first etch process to narrow a width of each of the first conductive patterns, forming an auxiliary layer on the first conductive patterns, the gate insulating patterns, and an exposed surface of the semiconductor substrate, and forming trenches by etching the auxiliary layer and the semiconductor substrate between the first conductive patterns.

    摘要翻译： 一种形成半导体器件的方法包括提供其中形成栅极绝缘图案和第一导电图案的半导体衬底，执行第一蚀刻工艺以缩小每个第一导电图案的宽度，在第一导电图案上形成辅助层， 栅极绝缘图案和半导体衬底的暴露表面，并且通过在第一导电图案之间蚀刻辅助层和半导体衬底来形成沟槽。

    Mixed Mobile Communication System of Asynchronous Communication Network and Synchronous Communication Network Having Handover Function of Mobile Communication Terminal, and Handover Method in the Same
    4.
    发明申请
    Mixed Mobile Communication System of Asynchronous Communication Network and Synchronous Communication Network Having Handover Function of Mobile Communication Terminal, and Handover Method in the Same 有权
    具有移动通信终端切换功能的异步通信网络和同步通信网络的混合移动通信系统及其切换方法

    公开(公告)号：US20080287131A1

    公开(公告)日：2008-11-20

    申请号：US11911995

    申请日：2005-04-19

    申请人： Jae Young Ju ,  Sang-Yun Lee ,  Hee-Hyeok Hahm ,  Soo Jin Kim ,  Bum-Soo Shin ,  Kyeong-Hee Han ,  Young-Ho Ju ,  Hyun Ki Hong ,  Young Ahn Ryu

    发明人： Jae Young Ju ,  Sang-Yun Lee ,  Hee-Hyeok Hahm ,  Soo Jin Kim ,  Bum-Soo Shin ,  Kyeong-Hee Han ,  Young-Ho Ju ,  Hyun Ki Hong ,  Young Ahn Ryu

    IPC分类号： H04Q7/20

    CPC分类号： H04W36/0066 ,  H04W8/12

    摘要： In the mobile communication system, asynchronous and synchronous Mobile Switching Centers (MSCs) are interconnected via an Interworking Interoperability Function (HF), and are connected to a Dual stack Home Location Register (D-HLR). The D-HLR stores and manages asynchronous subscription and synchronous subscription information of the mobile communication terminal. The HF stores and manages the synchronous mobile communication system information, receives the synchronous subscription information of the mobile communication terminal from the D-HLR, transmits synchronous system information and the synchronous subscription information of the mobile communication terminal to the synchronous MSC and receives a response from the synchronous MSC, and requests the asynchronous MSC to release a wireless connection when the mobile communication terminal and the synchronous mobile communication system are interconnected and notification of completion of the handover is provided.

    摘要翻译： 在移动通信系统中，异步和同步移动交换中心（MSC）通过互通互操作性功能（HF）进行互连，并连接到双栈归属位置寄存器（D-HLR）。 D-HLR存储和管理移动通信终端的异步订阅和同步订阅信息。 HF存储和管理同步移动通信系统信息，从D-HLR接收移动通信终端的同步订阅信息，向同步MSC发送同步系统信息和移动通信终端的同步订阅信息，并接收响应 并且当移动通信终端和同步移动通信系统互连并且提供切换完成的通知时，请求异步MSC释放无线连接。

    Method of manufacturing a semiconductor device
    6.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07704851B2

    公开(公告)日：2010-04-27

    申请号：US11616018

    申请日：2006-12-26

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/76

    CPC分类号： H01L21/823475 ,  H01L21/7682 ,  H01L27/115 ,  H01L27/11521

    摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate with gate structures. A sacrificial insulating layer is formed between the gate structures at a height lower than that of the gate structures such that a portion of each gate structure is exposed above the sacrificial insulating layer. Spacers are formed on sidewalls of the exposed portions of the gate structures. A portion of the sacrificial insulating layer between the spacers is exposed. The sacrificial insulating layer is removed, thereby forming spaces below the spacers. An insulating layer is formed to fill the spaces between the spacers such that air pockets are formed between the gate structures and below the spacers.

    摘要翻译： 制造半导体器件的方法包括：提供具有栅极结构的半导体衬底。 在栅极结构之间形成牺牲绝缘层，其高度低于栅极结构的高度，使得每个栅极结构的一部分暴露在牺牲绝缘层的上方。 隔板形成在栅极结构的暴露部分的侧壁上。 间隔物之间​​的牺牲绝缘层的一部分被暴露。 去除牺牲绝缘层，从而在间隔物之下形成空间。 形成绝缘层以填充间隔件之间的空间，使得在栅极结构之间和间隔物下方形成气穴。

    Method of forming a gate of a semiconductor device
    7.
    发明授权
    Method of forming a gate of a semiconductor device 有权
    形成半导体器件的栅极的方法

    公开(公告)号：US07700472B2

    公开(公告)日：2010-04-20

    申请号：US11761281

    申请日：2007-06-11

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/28247 ,  H01L21/28273 ,  H01L27/11521

    摘要： A method of forming a gate of a semiconductor device includes providing a semiconductor substrate over which a first conductive layer, a dielectric layer and a second conductive layer are formed. The second conductive layer is patterned to expose a part of the dielectric layer. A first protection layer is formed on sidewalls of the second conductive layer. A first etch process is performed to remove the exposed dielectric layer and to expose a part of the first conductive layer. A second protection layer is formed on sidewalls of the second conductive layer. A second etch process is performed to remove the exposed first conductive layer.

    摘要翻译： 形成半导体器件的栅极的方法包括提供半导体衬底，在其上形成第一导电层，电介质层和第二导电层。 图案化第二导电层以暴露电介质层的一部分。 第一保护层形成在第二导电层的侧壁上。 执行第一蚀刻工艺以去除暴露的介电层并暴露第一导电层的一部分。 第二保护层形成在第二导电层的侧壁上。 执行第二蚀刻工艺以去除暴露的第一导电层。

    METHOD AND SYSTEM FOR TRANSMITTING MULTIMEDIA CONTENTS IN COMMUNICATION NETWORK
    8.
    发明申请
    METHOD AND SYSTEM FOR TRANSMITTING MULTIMEDIA CONTENTS IN COMMUNICATION NETWORK 审中-公开
    在通信网络中传输多媒体内容的方法和系统

    公开(公告)号：US20090264138A1

    公开(公告)日：2009-10-22

    申请号：US12096064

    申请日：2007-01-26

    申请人： Bong Ju Kang ,  Min Geun Yoon ,  Yun Duk Jeong ,  Soo Jin Kim ,  Ki Mun Kim ,  Jin Hong Kim

    发明人： Bong Ju Kang ,  Min Geun Yoon ,  Yun Duk Jeong ,  Soo Jin Kim ,  Ki Mun Kim ,  Jin Hong Kim

    IPC分类号： H04W4/12

    CPC分类号： H04L67/06 ,  H04L67/325

    摘要： Disclosed is a method and system for transmitting multimedia contents in a communication network, wherein multimedia data stored in a subscriber's terminal can be automatically uploaded. The method comprises the steps of (a) transmitting a multimedia data transmission command from a terminal multimedia storage server to a terminal through a communication network; and (b) when the terminal receives the multimedia data transmission command, uploading the multimedia data stored in the terminal to the terminal multimedia storage server in response to the multimedia data transmission command.

    摘要翻译： 公开了一种用于在通信网络中传输多媒体内容的方法和系统，其中存储在订户终端中的多媒体数据可以被自动上传。 该方法包括以下步骤：（a）通过通信网络将多媒体数据传输命令从终端多媒体存储服务器发送到终端; 以及（b）当所述终端接收到所述多媒体数据发送命令时，响应于所述多媒体数据发送命令，将存储在所述终端中的所述多媒体数据上传到所述终端多媒体存储服务器。

    METHOD OF FABRICATING A FLASH MEMORY DEVICE
    9.
    发明申请
    METHOD OF FABRICATING A FLASH MEMORY DEVICE 失效
    制造闪速存储器件的方法

    公开(公告)号：US20080268594A1

    公开(公告)日：2008-10-30

    申请号：US11856700

    申请日：2007-09-17

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/8239

    CPC分类号： H01L27/105 ,  H01L27/11568 ,  H01L27/11573

    摘要： In a method of fabricating a flash memory device, a lower capping conductive layer of a peri region is patterned. A step formed between a cell gate and a gate for a peri region transistor is decreased by controlling a target etch thickness of a hard mask. Thus, an impurity does not infiltrate into the bottom of the gate for the peri region transistor through a lost portion of a SAC nitride layer. Accordingly, a hump phenomenon of the transistor formed in the peri region can be improved. Furthermore, a leakage current characteristic of the transistor formed in the peri region can be improved.

    摘要翻译： 在制造闪速存储器件的方法中，对围绕区域的下盖导电层进行图案化。 通过控制硬掩模的目标蚀刻厚度，减小了用于周边晶体管的单元栅极和栅极之间形成的台阶。 因此，通过SAC氮化物层的失去部分，杂质不会渗入到围绕晶体管的栅极的底部。 因此，能够提高在周边区域形成的晶体管的隆起现象。 此外，能够提高形成在周边区域的晶体管的漏电流特性。

    METHOD OF FORMING A GATE OF A SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF FORMING A GATE OF A SEMICONDUCTOR DEVICE 有权
    形成半导体器件栅极的方法

    公开(公告)号：US20080160747A1

    公开(公告)日：2008-07-03

    申请号：US11761281

    申请日：2007-06-11

    申请人： Soo Jin Kim

    发明人： Soo Jin Kim

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28247 ,  H01L21/28273 ,  H01L27/11521

    摘要： A method of forming a gate of a semiconductor device includes providing a semiconductor substrate over which a first conductive layer, a dielectric layer and a second conductive layer are formed. The second conductive layer is patterned to expose a part of the dielectric layer. A first protection layer is formed on sidewalls of the second conductive layer. A first etch process is performed to remove the exposed dielectric layer and to expose a part of the first conductive layer. A second protection layer is formed on sidewalls of the second conductive layer. A second etch process is performed to remove the exposed first conductive layer.

    摘要翻译： 形成半导体器件的栅极的方法包括提供半导体衬底，在其上形成第一导电层，电介质层和第二导电层。 图案化第二导电层以暴露电介质层的一部分。 第一保护层形成在第二导电层的侧壁上。 执行第一蚀刻工艺以去除暴露的介电层并暴露第一导电层的一部分。 第二保护层形成在第二导电层的侧壁上。 执行第二蚀刻工艺以去除暴露的第一导电层。