Abstract:
The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.
Abstract:
The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.
Abstract:
Embodiments of the invention provide filtering structures and methods. At least filtering structure includes a filtering medium for removing impurities from a gas produced by gasifying coal or biomass, and a catalyst for converting methane and carbon dioxide into synthesis gas by a dry reforming reaction and a steam reforming reaction. The filtering medium, according to various embodiments, is coated with the catalyst.
Abstract:
A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.
Abstract:
A universal GPS traffic monitoring system that uses a plurality of GPS enabled mobile devices to transmit near real-time traffic direction and speed information to a server. The sever processes the information thereby reducing the computational load and power consumption of the mobile devices. The system uses a Traffic Pattern Recognition software program that recognizes only valid traffic data while filtering out unwanted traffic data. The system creates a Distributed Traffic Data Store database containing the average speeds for designated traffic monitoring points (TMPs) created for the region. A request for traffic data containing the boundary data and the zoom level is sent from the mobile device to the server. The server reviews the request and determines which specific Distributed Traffic Data Store database contains the information and then creates and sends a compressed file containing the traffic information relevant to the TMPs in the request to the mobile device.
Abstract:
The present invention is directed to an optical disk having a projection that prevents full contact of the upper surface of the disk when engaging a supporting surface. The optical disk includes a projection formed in a central portion of the optical disk that abuts or is near the upper surface of a protecting layer.
Abstract:
Disclosed is a discharging control apparatus of a switching device for an inverter capable of reducing a spike voltage when the switching device is turned off and reducing a turn-off time of the switching device, the apparatus comprising, a fast discharge circuit section configured to provide a discharging path through which a gate voltage of the switching device is fast discharged at a first discharging speed, an idle discharge circuit section configured to provide a discharging path through which the gate voltage of the switching device is idly discharged at a second discharging speed slower than the first discharging speed, and a spike voltage reduction controller configured to control such that the gate voltage is discharged simultaneously via the fast discharge circuit section and the idle discharge circuit section, when the switching device is turned off in the state that a normal current flows in the switching device, so as to reduce a spike voltage and simultaneously fast turn the switching device off.
Abstract:
A developing unit includes a toner storage portion for containing toner and a development portion for containing the toner supplied from the toner storage portion. The development portion includes a developing roller for supplying the toner to a photosensitive body, a supply roller and an auxiliary supply roller. The supply roller and the auxiliary supply roller rotate while facing each other to supply the toner to the developing roller. In the developing unit, an inequality that |D−(R1+R2)|≦1.0 mm is satisfied, where a distance between the centers of the auxiliary supply roller and the supply roller in a region where the auxiliary supply roller and the supply roller face each other is D, a radius of the supply roller is R1, and a radius of the auxiliary supply roller is R2.
Abstract:
This invention relates to a discoloration indicator for checking the life span of a desulfurization adsorbent, and a desulfurization reactor and a desulfurization system including the same, and specifically, to a discoloration indicator for checking the life span of a desulfurization adsorbent able to effectively adsorb and remove organic sulfur compounds from fossil fuels, including natural gas or LPG containing the organic sulfur compound, and to a desulfurization reactor and a desulfurization system including the same. This invention makes it possible to remove the organic sulfur compound using the desulfurization adsorbent and to check the replacement time of the adsorbent with the naked eye or using an electrical signal, and thus may be applied to the treatment of natural gas or LPG requiring desulfurization, and also to hydrogen generators for home fuel cell generation systems or distributed fuel cell generation systems requiring that devices be simple, or requiring unmanned operation.
Abstract:
A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.