Nitride based semiconductor light emitting device
    1.
    发明授权
    Nitride based semiconductor light emitting device 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US08759815B2

    公开(公告)日:2014-06-24

    申请号:US13818572

    申请日:2011-09-01

    CPC classification number: H01L33/12 H01L33/04 H01L33/06 H01L33/14 H01L33/32

    Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    Abstract translation: 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。

    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US20130299775A1

    公开(公告)日:2013-11-14

    申请号:US13818572

    申请日:2011-09-01

    CPC classification number: H01L33/12 H01L33/04 H01L33/06 H01L33/14 H01L33/32

    Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    Abstract translation: 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。

    Stacked semiconductor device and related method
    4.
    发明授权
    Stacked semiconductor device and related method 有权
    叠层半导体器件及相关方法

    公开(公告)号:US08419853B2

    公开(公告)日:2013-04-16

    申请号:US12623515

    申请日:2009-11-23

    Abstract: A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.

    Abstract translation: 公开了一种叠层半导体器件及其制造方法。 堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层,其中衬底包括单晶硅和填充开口的第一种子图案,其中第一种子图案具有设置在开口上方的上部, 并且上部部分与基板成锥形。 层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层,其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层,以及填充沟槽的第一单晶硅结构。

    Universal GPS traffic monitoring system
    5.
    发明授权
    Universal GPS traffic monitoring system 失效
    通用GPS流量监控系统

    公开(公告)号:US08386157B2

    公开(公告)日:2013-02-26

    申请号:US12578550

    申请日:2009-10-13

    Applicant: Jin Hong Kim

    Inventor: Jin Hong Kim

    CPC classification number: G08G1/01 G01S5/0027 G01S19/14

    Abstract: A universal GPS traffic monitoring system that uses a plurality of GPS enabled mobile devices to transmit near real-time traffic direction and speed information to a server. The sever processes the information thereby reducing the computational load and power consumption of the mobile devices. The system uses a Traffic Pattern Recognition software program that recognizes only valid traffic data while filtering out unwanted traffic data. The system creates a Distributed Traffic Data Store database containing the average speeds for designated traffic monitoring points (TMPs) created for the region. A request for traffic data containing the boundary data and the zoom level is sent from the mobile device to the server. The server reviews the request and determines which specific Distributed Traffic Data Store database contains the information and then creates and sends a compressed file containing the traffic information relevant to the TMPs in the request to the mobile device.

    Abstract translation: 一种通用GPS交通监控系统,其使用多个支持GPS的移动设备将近实时的交通方向和速度信息传送到服务器。 服务器处理信息,从而减少移动设备的计算负荷和功耗。 系统使用流量模式识别软件程序,仅识别有效的流量数据,同时过滤不需要的流量数据。 系统创建一个分布式流量数据存储数据库,其中包含为该地区创建的指定流量监控点(TMP)的平均速度。 包含边界数据和缩放级别的流量数据的请求从移动设备发送到服务器。 服务器审查请求并确定哪个特定的分布式流量数据存储数据库包含该信息,然后在请求中创建并发送一个包含与TMP相关的流量信息的压缩文件给移动设备。

    Discharging control apparatus of switching device for inverter
    7.
    发明授权
    Discharging control apparatus of switching device for inverter 有权
    逆变器开关装置的放电控制装置

    公开(公告)号:US08144443B2

    公开(公告)日:2012-03-27

    申请号:US12251613

    申请日:2008-10-15

    Applicant: Jin-Hong Kim

    Inventor: Jin-Hong Kim

    CPC classification number: H03K17/168 H03K17/166

    Abstract: Disclosed is a discharging control apparatus of a switching device for an inverter capable of reducing a spike voltage when the switching device is turned off and reducing a turn-off time of the switching device, the apparatus comprising, a fast discharge circuit section configured to provide a discharging path through which a gate voltage of the switching device is fast discharged at a first discharging speed, an idle discharge circuit section configured to provide a discharging path through which the gate voltage of the switching device is idly discharged at a second discharging speed slower than the first discharging speed, and a spike voltage reduction controller configured to control such that the gate voltage is discharged simultaneously via the fast discharge circuit section and the idle discharge circuit section, when the switching device is turned off in the state that a normal current flows in the switching device, so as to reduce a spike voltage and simultaneously fast turn the switching device off.

    Abstract translation: 公开了一种用于逆变器的开关装置的放电控制装置,其能够在切换装置关闭时降低尖峰电压并且减小开关装置的关断时间,该装置包括:快速放电电路部, 开关装置的栅极电压以第一放电速度快速放电的放电路径;空闲放电电路部,被配置为提供放电路径,通过该放电路径,开关装置的栅极电压以第二放电速度缓慢放电 以及尖峰电压降低控制器,被配置为通过快速放电电路部分和空闲放电电路部分同时控制栅极电压,当开关器件在正常电流 在开关装置中流动,以便降低尖峰电压并同时快速转动 开关设备关闭。

    DEVELOPING UNIT AND IMAGE FORMING APPARATUS EMPLOYING THE SAME
    8.
    发明申请
    DEVELOPING UNIT AND IMAGE FORMING APPARATUS EMPLOYING THE SAME 有权
    开发单位和使用其的图像形成装置

    公开(公告)号:US20120051799A1

    公开(公告)日:2012-03-01

    申请号:US13075770

    申请日:2011-03-30

    CPC classification number: G03G15/0808

    Abstract: A developing unit includes a toner storage portion for containing toner and a development portion for containing the toner supplied from the toner storage portion. The development portion includes a developing roller for supplying the toner to a photosensitive body, a supply roller and an auxiliary supply roller. The supply roller and the auxiliary supply roller rotate while facing each other to supply the toner to the developing roller. In the developing unit, an inequality that |D−(R1+R2)|≦1.0 mm is satisfied, where a distance between the centers of the auxiliary supply roller and the supply roller in a region where the auxiliary supply roller and the supply roller face each other is D, a radius of the supply roller is R1, and a radius of the auxiliary supply roller is R2.

    Abstract translation: 显影单元包括用于容纳调色剂的调色剂储存部分和用于容纳从调色剂存储部分供应的调色剂的显影部分。 显影部分包括用于将调色剂供应到感光体,供给辊和辅助供应辊的显影辊。 供给辊和辅助供给辊相对旋转而将调色剂供给到显影辊。 在显影单元中,满足| D-(R1 + R2)|≦̸ 1.0mm的不等式,其中辅助供给辊和供给辊的中心之间的距离在辅助供应辊和供给 辊面彼此为D,供给辊的半径为R1,辅助供给辊的半径为R2。

    Discoloration indicators for checking life span of desulfurization disorbent, and desulfurization reactor and desulfurization system comprising the same
    9.
    发明授权
    Discoloration indicators for checking life span of desulfurization disorbent, and desulfurization reactor and desulfurization system comprising the same 有权
    用于检查脱硫剂的使用寿命的变色指标,以及包含该脱硫反应器的脱硫反应器和脱硫系统

    公开(公告)号:US08062597B2

    公开(公告)日:2011-11-22

    申请号:US12309125

    申请日:2007-07-11

    CPC classification number: G01N31/229

    Abstract: This invention relates to a discoloration indicator for checking the life span of a desulfurization adsorbent, and a desulfurization reactor and a desulfurization system including the same, and specifically, to a discoloration indicator for checking the life span of a desulfurization adsorbent able to effectively adsorb and remove organic sulfur compounds from fossil fuels, including natural gas or LPG containing the organic sulfur compound, and to a desulfurization reactor and a desulfurization system including the same. This invention makes it possible to remove the organic sulfur compound using the desulfurization adsorbent and to check the replacement time of the adsorbent with the naked eye or using an electrical signal, and thus may be applied to the treatment of natural gas or LPG requiring desulfurization, and also to hydrogen generators for home fuel cell generation systems or distributed fuel cell generation systems requiring that devices be simple, or requiring unmanned operation.

    Abstract translation: 本发明涉及一种用于检查脱硫吸附剂寿命的变色指示剂,脱硫反应器和包括该脱硫反应器和脱硫系统的脱硫系统,具体涉及用于检查能够有效吸附的脱硫吸附剂的寿命的变色指示剂 从包括天然气或含有机硫化合物的LPG的化石燃料中除去有机硫化合物,以及脱硫反应器和包括其的脱硫系统。 本发明可以使用脱硫吸附剂除去有机硫化合物,并且用肉眼检查吸附剂的更换时间或使用电信号,因此可以应用于需要脱硫的天然气或LPG的处理, 还有用于家用燃料电池生成系统的氢发生器或需要设备简单或需要无人操作的分布式燃料电池生成系统。

    Thin film diode panel and manufacturing method of the same
    10.
    发明授权
    Thin film diode panel and manufacturing method of the same 有权
    薄膜二极管面板及其制造方法相同

    公开(公告)号:US07839463B2

    公开(公告)日:2010-11-23

    申请号:US10578028

    申请日:2004-10-28

    Abstract: A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.

    Abstract translation: 一种薄膜二极管阵列面板,包括:绝缘衬底(110); 第一和第二冗余栅极线(141,142),由不透明导体制成并形成在绝缘基板上; 第一和第二浮置电极(143,144),由不透明导体制成,形成在所述绝缘基板上,并设置在所述第一和第二冗余栅极线(141,142)之间; 形成在第一和第二浮置电极(143,144)上的绝缘层(151,152); 第一栅极线(121),形成在所述第一冗余栅极线(141)上并且包括与所述第一浮置电极(143)重叠的第一输入电极(123),其中所述绝缘层(151)插入在所述第一输入电极和 第一浮动电极; 形成在第二冗余栅极线(142)上并包括与第二浮置电极(144)重叠的第二输入电极(124)的第二栅极线(122),其中绝缘层(152)介于第二输入电极 )和第二浮置电极(144); 和包括与所述第一浮动电极(143)重叠的第一接触电极(191)的像素电极(190),其中所述绝缘层(151)插入在所述第一接触电极(191)和所述第一浮动电极(143)之间, 与第二接触电极(192)和第二浮动电极(144)之间插入绝缘层(152)的第二浮动电极(144)重叠的第二接触电极(192)和主体。

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