公开(公告)号：US20070096115A1

公开(公告)日：2007-05-03

申请号：US11581757

申请日：2006-10-17

申请人： Hyuk Lee ,  In Pyeon ,  Hyun-Ju Park ,  Hyun Kim ,  Dong Kim ,  Hyoun Shin

发明人： Hyuk Lee ,  In Pyeon ,  Hyun-Ju Park ,  Hyun Kim ,  Dong Kim ,  Hyoun Shin

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极，p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极，n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间，并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的 。

公开(公告)号：US20060220043A1

公开(公告)日：2006-10-05

申请号：US11328196

申请日：2006-01-10

申请人： Hyun Kim ,  Hyoun Shin ,  Hyuk Lee ,  In Pyeon ,  Chang Kim

发明人： Hyun Kim ,  Hyoun Shin ,  Hyuk Lee ,  In Pyeon ,  Chang Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.

摘要翻译： 本发明涉及一种具有矩形顶视图的氮化物半导体发光器件，其中适当地形成n电极和p电极结构以改善电流的传播和增强亮度。 发光器件包括形成在衬底上的n型氮化物半导体层，以及包括n侧接合焊盘和从n侧焊盘延伸的手指型n电极的n电极。 该器件还包括台阶结构，其包括依次沉积的有源层和p型氮化物半导体层，形成在台面结构的大致整个上表面上的欧姆接触层和包括p侧的p型 接合焊盘和远离p侧接合焊盘延伸的手指型p电极。

公开(公告)号：US20060202225A1

公开(公告)日：2006-09-14

申请号：US11430999

申请日：2006-05-10

申请人： Hyun Kim ,  Hyuk Lee ,  Hyoun Shin ,  In Pyeon

发明人： Hyun Kim ,  Hyuk Lee ,  Hyoun Shin ,  In Pyeon

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.

摘要翻译： 这里公开了一种用于在倒装芯片结构的发光器件中安装发光二极管的基座。 包括在半导体结构的发光器件中安装氮化物半导体发光二极管的晶体管的基座包括：由第一导电半导体材料制成的衬底; 形成在所述基板的局部区域上并由第二导电半导体材料制成的第一区域; 形成在除了所述第一区域之外的其余区域上并由所述第二导电半导体材料制成的第二区域; 分别形成在第一和第二区域上的第一和第二电极; 以及形成在所述基板的背面上的导电层，其中所述第一和第二电极通过使用凸块与所述氮化物半导体发光二极管的n型电极和p型电极连接。

公开(公告)号：US20060060878A1

公开(公告)日：2006-03-23

申请号：US10998941

申请日：2004-11-30

申请人： Hyun Kim ,  Hyuk Lee ,  Hyoun Shin ,  In Pyeon

发明人： Hyun Kim ,  Hyuk Lee ,  Hyoun Shin ,  In Pyeon

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.

摘要翻译： 这里公开了一种用于在倒装芯片结构的发光器件中安装发光二极管的基座。 包括在半导体结构的发光器件中安装氮化物半导体发光二极管的晶体管的基座包括：由第一导电半导体材料制成的衬底; 形成在所述基板的局部区域上并由第二导电半导体材料制成的第一区域; 形成在除了所述第一区域之外的其余区域上并由所述第二导电半导体材料制成的第二区域; 分别形成在第一和第二区域上的第一和第二电极; 以及形成在所述基板的背面上的导电层，其中所述第一和第二电极通过使用凸块与所述氮化物半导体发光二极管的n型电极和p型电极连接。

公开(公告)号：US20060163604A1

公开(公告)日：2006-07-27

申请号：US11244084

申请日：2005-10-06

申请人： Hyoun Shin ,  Hyun Kim ,  In Pyeon ,  Chang Kim

发明人： Hyoun Shin ,  Hyun Kim ,  In Pyeon ,  Chang Kim

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L27/15 ,  H01L33/32

摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are provided. The light emitting device comprises a substrate; a main GaN-based LED including a first p-side electrode and a first n-side electrode, the main GaN-based LED formed in a first region on the substrate; and an ESD protecting GaN-based LED including a second p-side electrode and a second n-side electrode, the ESD protecting GaN-based LED formed in a second region on the substrate. The first region is separated from the second region by a device isolation region. The first p-side and n-side electrodes are electrically connected to the second n-side and p-side electrodes, respectively.

摘要翻译： 提供了一种氮化镓系发光器件及其制造方法。 发光器件包括衬底; 包括第一p侧电极和第一n侧电极的主要GaN基LED，所述主GaN基LED形成在所述基板上的第一区域中; 以及包括第二p侧电极和第二n侧电极的ESD保护GaN基LED，形成在基板上的第二区域中的ESD保护GaN基LED。 第一区域通过器件隔离区域与第二区域分离。 第一p侧电极和n侧电极分别电连接到第二n侧电极和p侧电极。

公开(公告)号：US20060054909A1

公开(公告)日：2006-03-16

申请号：US10993371

申请日：2004-11-22

申请人： Hyoun Shin ,  Bong Yi ,  Jae Ro ,  In Pyeon

发明人： Hyoun Shin ,  Bong Yi ,  Jae Ro ,  In Pyeon

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.

摘要翻译： 本发明涉及一种LED，其中在蓝宝石衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p电极。 包含Cu和Si的高反射率材料层沉积在n掺杂半导体层的剩余部分区域上。 在高反射率材料层上形成n电极。 形成在n电极和下面的n掺杂半导体层的部分区域之间的高反射率材料层可以将光朝向衬底反射，从而提高LED的发光效率。