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公开(公告)号：US20070096115A1
公开(公告)日：2007-05-03
申请号：US11581757
申请日：2006-10-17
申请人： Hyuk Lee , In Pyeon , Hyun-Ju Park , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , In Pyeon , Hyun-Ju Park , Hyun Kim , Dong Kim , Hyoun Shin
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.
摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极，p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极，n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间，并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的 。
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2.发明申请公开(公告)号：US20070080353A1
公开(公告)日：2007-04-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
IPC分类号： H01L33/00
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译： 氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。
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公开(公告)号：US20070074288A1
公开(公告)日：2007-03-29
申请号：US11527850
申请日：2006-09-26
申请人： Beom Chang , Jung Na , Geon Kim , Dong Kim , Jin Kim , Hyun Kim , Hyo Bang , Soo Lee , Seon Shon , Jong Jang , Sung Sohn
发明人： Beom Chang , Jung Na , Geon Kim , Dong Kim , Jin Kim , Hyun Kim , Hyo Bang , Soo Lee , Seon Shon , Jong Jang , Sung Sohn
IPC分类号： G06F12/14
CPC分类号： H04L43/028 , H04L43/062 , H04L43/16 , H04L63/1408
摘要： A network status display device using a traffic pattern map is provided. The device includes: a traffic feature extractor extracting a port number of a port having the maximum occupancy of micro-flows and macro-flows for each network address section and host address section with reference to traffic information collected by an external traffic information collector, calculating and storing an occupancy rate of the port; a traffic status display unit making a network traffic pattern map expressed by destination-source network addresses and a host traffic pattern map expressed by destination-source host addresses and displaying the port information stored in the traffic feature extractor on the network traffic pattern map and the host traffic pattern map; and a traffic anomaly determination unit determining whether a network status is abnormal with reference to the network traffic pattern map and the host traffic pattern map and detecting and reporting a harmful or abnormal traffic which causes the abnormal network status. The device can determine whether the anomaly deteriorating the network performance exists and can easily and quickly detect the harmful or abnormal traffic which causes the anomaly by the use of the port information of the port having the maximum occupancy of the micro-flows and the macro-flows for each network address section and each host address section.
摘要翻译： 提供了使用业务模式图的网络状态显示设备。 该设备包括：流量特征提取器，参考由外部交通信息收集器收集的交通信息，提取每个网络地址部分和主机地址部分具有最大占用微流量和宏流量的端口的端口号，计算 并存储所述端口的占用率; 形成由目的地源网络地址表示的网络流量模式图的流量状态显示单元和由目的地 - 源主机地址表示的主机流量模式图，并且在网络流量模式图上显示存储在流量特征提取器中的端口信息，并且 主机流量模式图; 以及流量异常判定单元，基于网络流量模式图和主机流量模式图来判断网络状态是否异常，并检测并报告导致异常网络状态的有害或异常流量。 该设备可以确定异常是否存在网络性能恶化，并可以通过使用具有微流量最大占用端口的端口信息和宏观流量来轻松快速地检测导致异常的有害或异常流量， 每个网络地址部分和每个主机地址部分的流程。
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4.发明申请Method for controlling peripheral system and fuel cell system using the same 有权用于控制外围系统和使用其的燃料电池系统的方法公开(公告)号：US20070104984A1
公开(公告)日：2007-05-10
申请号：US11585755
申请日：2006-10-23
IPC分类号： H01M8/04
CPC分类号： H01M16/003 , H01M8/04097 , H01M8/04126 , H01M8/04164 , H01M8/04194 , H01M8/04223 , H01M8/04225 , H01M8/04302 , H01M8/04447 , H01M8/04604 , H01M8/04955 , H01M8/04992 , H01M8/1011 , Y02E60/523 , Y02P90/40
摘要： A method for controlling a peripheral system (or a plurality of peripheral devices) and a fuel cell system using the same. The method includes: allocating an operation priority to the peripheral devices; storing information of the operation priority; and sequentially operating the peripheral devices by using electric energy stored in a small capacity electricity storage device according to the operation priority. The fuel cell system includes: the plurality of peripheral devices; an electricity storage device electrically connected with the peripheral devices; and a controller for sequentially operating the peripheral devices by using electric energy stored in the electricity storage device according to an operation priority.
摘要翻译： 一种用于控制外围系统（或多个外围设备）的方法和使用其的燃料电池系统。 该方法包括：向外围设备分配操作优先级; 存储操作优先级的信息; 并且通过使用存储在小容量蓄电装置中的电能依次操作外围装置。 燃料电池系统包括：多个外围设备; 与外围设备电连接的蓄电装置; 以及控制器，用于根据操作优先级通过使用存储在蓄电装置中的电能顺序地操作外围设备。
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公开(公告)号：US20050269588A1
公开(公告)日：2005-12-08
申请号：US10925934
申请日：2004-08-26
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44
摘要： The present invention provides a flip chip type nitride semiconductor light-emitting diode comprising a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.
摘要翻译： 本发明提供一种倒装芯片型氮化物半导体发光二极管，其包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。
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公开(公告)号：US20070206498A1
公开(公告)日：2007-09-06
申请号：US11599909
申请日：2006-11-15
申请人： Beom Chang , Jung Na , Geon Kim , Dong Kim , Jin Kim , Hyun Kim , Hyo Bang , Soo Lee , Seon Sohn , Jong Jang , Sung Sohn
发明人： Beom Chang , Jung Na , Geon Kim , Dong Kim , Jin Kim , Hyun Kim , Hyo Bang , Soo Lee , Seon Sohn , Jong Jang , Sung Sohn
IPC分类号： H04L12/26
CPC分类号： H04L43/045 , H04L43/0817 , H04L43/16
摘要： A network status display device using a traffic flow-radar is provided. The network status display device includes: a traffic feature extractor calculating flow occupancy rates for total flows, micro-flows and macro-flows with respect to each of a plurality of traffic features with reference to traffic information for each traffic feature such as a network address, a port, a transmitting/receiving host address or a protocol collected by an external traffic information collector, and storing the calculation result; a traffic status display unit displaying the flow occupancy rates for each traffic feature calculated and stored in the traffic feature extractor on a radar with dots for each traffic feature; and a traffic anomaly determination unit determining whether a network status is abnormal with reference to the radar for each traffic feature, detecting and reporting the type of the abnormal network status and harmful or abnormal traffic that generates the abnormal network status, when the abnormal status occurs.
摘要翻译： 提供了使用交通流量雷达的网络状态显示装置。 网络状态显示装置包括：业务特征提取器，参考每个业务特征（例如网络地址）的业务信息来计算关于多个业务特征中的每一个的总流量，微流量和宏流量的流量占用率 ，端口，发送/接收主机地址或由外部交通信息收集器收集的协议，并存储计算结果; 交通状态显示单元，其显示针对每个交通特征点的雷达上计算并存储在交通特征提取器中的每个交通特征的流量占用率; 以及交通异常判定单元，针对每个流量特征，参照雷达确定网络状态是否异常，检测和报告异常网络状态的类型以及产生异常网络状态的有害或异常流量，当发生异常状态时 。
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公开(公告)号：US20060150661A1
公开(公告)日：2006-07-13
申请号：US11196429
申请日：2005-08-04
CPC分类号： F25D23/04 , F25D17/062 , F25D2317/061 , F25D2317/062 , F25D2323/023 , F25D2331/803
摘要： A refrigerator is provided which selectively opens or closes an inner cover according to the closing or opening of an auxiliary door. The refrigerator includes a refrigerator door to open or close a refrigerator storage chamber, a door storage space provided at an inner side of the door, an access opening formed through the door to allow a user to take out items stored in the door storage space from the outside, the auxiliary door mounted at an outer side of the door to open or close the access opening, an inner cover mounted at the inner side of the door in an openable manner to separate the door storage space from the storage chamber, and an inner cover opening/closing device to close the inner cover when the auxiliary door is opened and to open the inner cover when the auxiliary door is closed.
摘要翻译： 提供一种根据辅助门的关闭或打开选择性地打开或关闭内盖的冰箱。 冰箱包括用于打开或关闭冰箱存储室的冰箱门，设置在门的内侧的门存储空间，通过门形成的进入开口，以允许用户将存储在门存储空间中的物品从 所述辅助门安装在所述门的外侧以打开或关闭所述进入开口;内盖，其以可打开的方式安装在所述门的内侧，以将所述门存储空间与所述储存室分离;以及 内盖打开/关闭装置，当辅助门打开时关闭内盖，并在辅门关闭时打开内盖。
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8.发明申请Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity 有权氮化物半导体发光器件具有静电放电（ESD）保护能力公开(公告)号：US20060060880A1
公开(公告)日：2006-03-23
申请号：US11053906
申请日：2005-02-10
IPC分类号： H01L29/22
CPC分类号： H01L27/15 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。
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公开(公告)号：US20060202227A1
公开(公告)日：2006-09-14
申请号：US11153500
申请日：2005-06-16
IPC分类号： H01L33/00
摘要： Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.
摘要翻译： 本文公开了垂直型氮化物半导体发光二极管。 氮化物半导体发光二极管包括n型氮化物半导体层，在n型氮化物半导体层下面形成的有源层，在有源层下面形成的p型氮化物半导体层和n侧电极， 形成在与n型氮化物半导体层的上表面的边缘相邻的接合焊盘和从接合焊盘形成为带状的至少一个延伸电极。 n侧电极的接合焊盘与作为发光面的n型氮化物半导体层的上表面的边缘相邻地形成，从而防止电线屏蔽从有源层发射的光。 扩展电极可以形成为各种形状，并且防止电流密度的集中，从而确保电流密度的有效分布。
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10.发明授权公开(公告)号：US08990666B2
公开(公告)日：2015-03-24
申请号：US13234130
申请日：2011-09-15
申请人： Jae Phil Kong , Hwa Seok Oh , Dong Kim
发明人： Jae Phil Kong , Hwa Seok Oh , Dong Kim
CPC分类号： G06F11/1008 , G06F11/108 , H03M13/1515 , H03M13/152 , H03M13/1545 , H03M13/6502
摘要： A decoder, a method of decoding and systems implementing the same are disclosed. In one example, the method includes calculating syndrome values from input codewords, generating an error location polynomial about the codewords using the syndrome values, determining an error count in the codewords using the error location polynomial, and adjusting power consumption of a circuit in response to the determined error count in the codewords. In one example, a frequency of a clock signal to be provided to a search circuit may be determined based on the error count, and the clock signal may be provided having the determined frequency to a search circuit, such as a Chien search circuit.
摘要翻译： 公开了解码器，解码方法及其实现方法。 在一个示例中，该方法包括从输入码字计算校正子值，使用校正子值生成关于码字的误差位置多项式，使用误差位置多项式确定码字中的误差计数，以及响应于 在码字中确定的错误计数。 在一个示例中，可以基于错误计数来确定要提供给搜索电路的时钟信号的频率，并且可以向诸如Chien搜索电路的搜索电路提供具有确定的频率的时钟信号。
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