摘要:
A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process.
摘要:
A light emitting device and a method for fabricating the same according to the present invention are advantageous in that since an LLO (Laser Lift Off) process is performed using a thick metal film grown through a growth process, an occurrence rate of a void is remarkably decreased due to dense bonding between metals so that an occurrence rate of a crack can be decreased. Further, the present invention has an advantage in that a metal is filled in trench regions formed through an isolation process for devices, thereby protecting the devices and ensuring excellent heat dissipation. The present invention has a further advantage in that a reflective film is formed on inclined sidewalls of a device-forming thin film layer so that light loss through lateral sides of the device can be reduced, thereby improving optical properties.
摘要:
A rod type light emitting device and a method for fabricating the same are disclosed, wherein rods are formed of a material capable of emitting light on a first polarity layer, and a second polarity layer is formed to wrap around each of the rods, such that a light emitting area increases and the amount of light emitted to the outside without being confined within a device also increases, thereby improving the light output of the device. Further, an active layer is formed of a nano rod structure to enhance light extraction efficiency.
摘要:
A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.