公开(公告)号：US20120125529A1

公开(公告)日：2012-05-24

申请号：US13363272

申请日：2012-01-31

申请人： Hyun Sik SEO ,  Seung Han Paek ,  Nack Bong Choi

发明人： Hyun Sik SEO ,  Seung Han Paek ,  Nack Bong Choi

IPC分类号： B32B38/10

CPC分类号： G02F1/133305 ,  B32B37/12 ,  B32B2457/20 ,  B32B2457/206 ,  C09J7/38 ,  C09J2201/134 ,  C09J2201/36 ,  Y10T156/1153 ,  Y10T428/2848

摘要： A fabricating method of a flexible display device includes forming first and second jig substrates that have a first groove and a second groove formed in a lower part of an edge of the first groove; spreading an adhesive over the second groove; fixing first and second flexible substrates to the first groove and the adhesive; fabricating an upper array substrate on the first flexible substrate and a lower array substrate on the second flexible substrate; bonding the upper array substrate to the lower array substrate and injecting a liquid crystal; and peeling the first and second flexible substrates from the first and second jig substrates.

摘要翻译： 柔性显示装置的制造方法包括：形成具有形成在第一凹槽的边缘的下部中的第一凹槽和第二凹槽的第一和第二夹具基板; 在第二凹槽上铺展粘合剂; 将第一和第二柔性基板固定到第一凹槽和粘合剂; 在所述第一柔性基板上制造上阵列基板，在所述第二柔性基板上制造下阵列基板; 将上阵列基板接合到下阵列基板并注入液晶; 以及从第一和第二夹具基板剥离第一和第二柔性基板。

公开(公告)号：US20090317941A1

公开(公告)日：2009-12-24

申请号：US12549032

申请日：2009-08-27

申请人： Hyun Sik SEO ,  Nack Bong CHOI

发明人： Hyun Sik SEO ,  Nack Bong CHOI

IPC分类号： H01L51/40

CPC分类号： H01L51/0018 ,  G02F1/1368 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/055

摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

摘要翻译： 公开了一种有机TFT阵列基板及其制造方法。 在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。 源电极连接到数据线。 漏电极与源电极隔开规定的距离。 有机半导体层在源极和漏极之间形成沟道。 有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。 栅电极覆盖有机栅绝缘膜上的有机半导体层。 使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。 像素电极连接到漏电极。

公开(公告)号：US20090263978A1

公开(公告)日：2009-10-22

申请号：US12495377

申请日：2009-06-30

申请人： Hyun Sik SEO ,  Yun Ho Jung ,  Young Joo Kim ,  Jaesung You

发明人： Hyun Sik SEO ,  Yun Ho Jung ,  Young Joo Kim ,  Jaesung You

IPC分类号： H01L21/268

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.

摘要翻译： 激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底，将激光掩模定位在衬底上，激光掩模包括含有透射区域和阻挡区域的掩模图案，照射第一激光束 通过激光掩模的图案在基板的表面上，首先使硅薄膜的预定区域结晶，使激光掩模或其上载置基板的载台沿X轴方向移动，以使用第二结晶 激光掩模，在X轴方向上重复地向基板的端部进行结晶，使激光掩模或载物台沿Y轴方向移动，并且在Y轴方向上反复进行结晶以完成结晶。