公开(公告)号：US07439103B2

公开(公告)日：2008-10-21

申请号：US11207308

申请日：2005-08-19

申请人： Hyun Sik Seo ,  Dae Hyun Nam ,  Nack Bong Choi

发明人： Hyun Sik Seo ,  Dae Hyun Nam ,  Nack Bong Choi

IPC分类号： H01L21/335 ,  H01L21/8232

CPC分类号： H01L51/0545 ,  H01L51/0018

摘要： An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管的制造方法包括在基板上形成栅电极。 在包括栅电极的基板的整个表面上形成栅极绝缘层，并且在栅极绝缘层上以预定的间隔形成源极和漏极。 在基板的整个表面上形成有机半导体层，在有机半导体层上形成第一保护层。 图案化第一保护层，并且使用剩余的第一保护层作为掩模蚀刻有机半导体层。 然后在基板的整个表面上形成第二保护层。

公开(公告)号：US07820477B2

公开(公告)日：2010-10-26

申请号：US12549032

申请日：2009-08-27

申请人： Hyun Sik Seo ,  Nack Bong Choi

发明人： Hyun Sik Seo ,  Nack Bong Choi

IPC分类号： H01L51/40 ,  H01L21/4763 ,  G02F1/136 ,  G02F1/1333

CPC分类号： H01L51/0018 ,  G02F1/1368 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/055

摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

摘要翻译： 公开了一种有机TFT阵列基板及其制造方法。 在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。 源电极连接到数据线。 漏电极与源电极隔开规定的距离。 有机半导体层在源极和漏极之间形成沟道。 有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。 栅电极覆盖有机栅绝缘膜上的有机半导体层。 使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。 像素电极连接到漏电极。

公开(公告)号：US20070252934A1

公开(公告)日：2007-11-01

申请号：US11599559

申请日：2006-11-14

申请人： Hyun Sik Seo ,  Nack Bong Choi

发明人： Hyun Sik Seo ,  Nack Bong Choi

IPC分类号： G02F1/1333

CPC分类号： H01L51/0018 ,  G02F1/1368 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/055

摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

摘要翻译： 公开了一种有机TFT阵列基板及其制造方法。 在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。 源电极连接到数据线。 漏电极与源电极隔开规定的距离。 有机半导体层在源极和漏极之间形成沟道。 有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。 栅电极覆盖有机栅绝缘膜上的有机半导体层。 使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。 像素电极连接到漏电极。

公开(公告)号：US07602464B2

公开(公告)日：2009-10-13

申请号：US11599559

申请日：2006-11-14

申请人： Hyun Sik Seo ,  Nack Bong Choi

发明人： Hyun Sik Seo ,  Nack Bong Choi

IPC分类号： G02F1/1333 ,  G02F1/136

CPC分类号： H01L51/0018 ,  G02F1/1368 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/055

摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

摘要翻译： 公开了一种有机TFT阵列基板及其制造方法。 在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。 源电极连接到数据线。 漏电极与源电极隔开规定的距离。 有机半导体层在源极和漏极之间形成沟道。 有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。 栅电极覆盖有机栅绝缘膜上的有机半导体层。 使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。 像素电极连接到漏电极。

公开(公告)号：US08623162B2

公开(公告)日：2014-01-07

申请号：US13363272

申请日：2012-01-31

申请人： Hyun Sik Seo ,  Seung Han Paek ,  Nack Bong Choi

发明人： Hyun Sik Seo ,  Seung Han Paek ,  Nack Bong Choi

IPC分类号： B29C65/52

CPC分类号： G02F1/133305 ,  B32B37/12 ,  B32B2457/20 ,  B32B2457/206 ,  C09J7/38 ,  C09J2201/134 ,  C09J2201/36 ,  Y10T156/1153 ,  Y10T428/2848

摘要： A fabricating method of a flexible display device includes forming first and second jig substrates that have a first groove and a second groove formed in a lower part of an edge of the first groove; spreading an adhesive over the second groove; fixing first and second flexible substrates to the first groove and the adhesive; fabricating an upper array substrate on the first flexible substrate and a lower array substrate on the second flexible substrate; bonding the upper array substrate to the lower array substrate and injecting a liquid crystal; and peeling the first and second flexible substrates from the first and second jig substrates.

摘要翻译： 柔性显示装置的制造方法包括：形成具有形成在第一凹槽的边缘的下部中的第一凹槽和第二凹槽的第一和第二夹具基板; 在第二凹槽上铺展粘合剂; 将第一和第二柔性基板固定到第一凹槽和粘合剂; 在所述第一柔性基板上制造上阵列基板，在所述第二柔性基板上制造下阵列基板; 将上阵列基板接合到下阵列基板并注入液晶; 以及从第一和第二夹具基板剥离第一和第二柔性基板。

公开(公告)号：US20120125529A1

公开(公告)日：2012-05-24

申请号：US13363272

申请日：2012-01-31

申请人： Hyun Sik SEO ,  Seung Han Paek ,  Nack Bong Choi

发明人： Hyun Sik SEO ,  Seung Han Paek ,  Nack Bong Choi

IPC分类号： B32B38/10

CPC分类号： G02F1/133305 ,  B32B37/12 ,  B32B2457/20 ,  B32B2457/206 ,  C09J7/38 ,  C09J2201/134 ,  C09J2201/36 ,  Y10T156/1153 ,  Y10T428/2848

摘要： A fabricating method of a flexible display device includes forming first and second jig substrates that have a first groove and a second groove formed in a lower part of an edge of the first groove; spreading an adhesive over the second groove; fixing first and second flexible substrates to the first groove and the adhesive; fabricating an upper array substrate on the first flexible substrate and a lower array substrate on the second flexible substrate; bonding the upper array substrate to the lower array substrate and injecting a liquid crystal; and peeling the first and second flexible substrates from the first and second jig substrates.

摘要翻译： 柔性显示装置的制造方法包括：形成具有形成在第一凹槽的边缘的下部中的第一凹槽和第二凹槽的第一和第二夹具基板; 在第二凹槽上铺展粘合剂; 将第一和第二柔性基板固定到第一凹槽和粘合剂; 在所述第一柔性基板上制造上阵列基板，在所述第二柔性基板上制造下阵列基板; 将上阵列基板接合到下阵列基板并注入液晶; 以及从第一和第二夹具基板剥离第一和第二柔性基板。

公开(公告)号：US08147640B2

公开(公告)日：2012-04-03

申请号：US11311377

申请日：2005-12-20

申请人： Hyun Sik Seo ,  Seung Han Paek ,  Nack Bong Choi

发明人： Hyun Sik Seo ,  Seung Han Paek ,  Nack Bong Choi

IPC分类号： B29C65/50 ,  B29C65/76

CPC分类号： G02F1/133305 ,  B32B37/12 ,  B32B2457/20 ,  B32B2457/206 ,  C09J7/38 ,  C09J2201/134 ,  C09J2201/36 ,  Y10T156/1153 ,  Y10T428/2848

摘要： A fabricating method of a flexible display device includes the steps of providing an adhesive layer including a first adhesive material on a first surface of a support film, a second adhesive material on a second surface of the support film such that an adhesive strength of the second adhesive material is lower than an adhesive strength of the first adhesive material, and a third adhesive material encompassing an edge of the second adhesive material such that an adhesive strength of the third adhesive material is higher than the adhesive strength of the second adhesive material; a first passivation film adhered to the first surface of the support film with the first adhesive material therebetween; and a second passivation film adhered to the second surface of the support film with the second adhesive material and the third adhesive material therebetween; peeling the first passivation film from the adhesive layer; adhering a rigid substrate to the first adhesive material; peeling the second passivation film from the adhesive layer; and adhering a flexible substrate onto the second and third adhesive materials.

摘要翻译： 柔性显示装置的制造方法包括以下步骤：在支撑膜的第一表面上提供包括第一粘合材料的粘合剂层，在支撑膜的第二表面上提供第二粘合材料，使得第二粘合剂的粘合强度 粘合剂材料低于第一粘合剂材料的粘合强度，以及包围第二粘合材料的边缘的第三粘合剂材料，使得第三粘合剂材料的粘合强度高于第二粘合材料的粘合强度; 第一钝化膜，其粘附到所述支撑膜的第一表面上，其间具有第一粘合剂材料; 以及第二钝化膜，其中所述第二粘合剂材料和所述第三粘合剂材料粘附到所述支撑膜的所述第二表面; 从粘合剂层剥离第一钝化膜; 将刚性基材粘附到第一粘合剂材料上; 从粘合剂层剥离第二钝化膜; 并将柔性基板粘附到第二和第三粘合材料上。

公开(公告)号：US08208086B2

公开(公告)日：2012-06-26

申请号：US12827612

申请日：2010-06-30

申请人： Nack Bong Choi ,  Min Joo Kim

发明人： Nack Bong Choi ,  Min Joo Kim

IPC分类号： G02F1/136 ,  G02F1/1333

CPC分类号： H01L51/0541 ,  G02F1/1368 ,  H01L51/102

摘要： Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.

摘要翻译： 提供一种有机半导体结构及其制造方法，使用有机半导体结构的有机薄膜晶体管（OTFT）和制造OTFT的方法以及使用其的显示装置。 OTFT包括：形成在基底基板上的氧化物层; 在所述氧化物层上的源电极，其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极，其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案，具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案，其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅极绝缘层上的栅电极。

公开(公告)号：US07369202B2

公开(公告)日：2008-05-06

申请号：US10963945

申请日：2004-10-14

申请人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Nack Bong Choi ,  Seung Hee Nam

发明人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Nack Bong Choi ,  Seung Hee Nam

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/13458 ,  G02F1/134363 ,  G02F2001/136222 ,  G02F2001/136236

摘要： An in plane switching (IPS) mode liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate with a TFT provided at a crossing of gate and data lines, a protective film protecting the TFT, a pixel electrode connected to the TFT, a common line substantially parallel to the pixel electrode, a common electrode connected to the common line to generate a horizontal electric field with the pixel electrode, and a pad including a transparent conductive material and connected to the gate line, the data line and/or the common line. A color filter array substrate is joined to, and overlaps a portion of, the TFT array substrate. Portions of the protective film where the color filter array substrate which do not overlap the TFT array substrate are removed to expose the transparent conductive material included in the pad.

摘要翻译： 平面切换（IPS）模式液晶显示（LCD）面板以减少数量的掩模处理制造，并且包括具有设置在栅极和数据线的交叉处的TFT的薄膜晶体管（TFT）阵列基板，保护 TFT保护膜，连接到TFT的像素电极，基本上平行于像素电极的公共线，与公共线连接以产生与像素电极的水平电场的公共电极，以及包括透明导电材料的焊盘 并连接到栅极线，数据线和/或公共线。 滤色器阵列基板与TFT阵列基板接合并与其重叠。 除去与TFT阵列基板不重叠的滤色器阵列基板的保护膜的一部分，以露出包括在该焊盘中的透明导电材料。

公开(公告)号：US08129898B2

公开(公告)日：2012-03-06

申请号：US12338089

申请日：2008-12-18

申请人： Nack Bong Choi ,  Juhn Suk Yoo

发明人： Nack Bong Choi ,  Juhn Suk Yoo

IPC分类号： H01L51/10

CPC分类号： H01L51/5253 ,  H01L27/3244 ,  H01L27/3258 ,  H01L51/5259 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/558

摘要： A flexible organic electro-luminescence device is adapted to improve its flexibility and to completely and substantially exclude the intrusion of external moisture and/or oxygen. The flexible organic electro-luminescence device includes: a substrate of a thickness of about 0.05 mm˜0.2 mm; a planarization layer on the substrate; a thin film transistor on the planarization layer; a passivation layer on the planarization layer and the thin film transistor, with a contact hole exposing a drain electrode of the thin film transistor; a reflective layer on the passivation layer; an anode electrode on the reflective layer, electrically connected to the drain electrode of the thin film transistor; a bank layer on the edge region of the anode electrode and the passivation layer, including an organic material; an organic light emitting layer on the anode electrode; a cathode electrode on the bank layer and the organic light emitting layer; and a seal layer on the cathode electrode, including an organic film, an inorganic film, an adhesive film and a protective film.

摘要翻译： 灵活的有机电致发光装置适于提高其柔性并完全和基本上排除外部水分和/或氧气的侵入。 柔性有机电致发光器件包括：厚度为约0.05mm〜0.2mm的衬底; 衬底上的平坦化层; 平坦化层上的薄膜晶体管; 平坦化层和薄膜晶体管上的钝化层，具有暴露薄膜晶体管的漏电极的接触孔; 钝化层上的反射层; 反射层上的阳极，电连接到薄膜晶体管的漏电极; 阳极电极和钝化层的边缘区域上的堤层，包括有机材料; 阳极上的有机发光层; 堤层上的阴极和有机发光层; 以及阴极电极上的密封层，包括有机膜，无机膜，粘合膜和保护膜。