摘要:
A fabricating method of a flexible display device includes forming first and second jig substrates that have a first groove and a second groove formed in a lower part of an edge of the first groove; spreading an adhesive over the second groove; fixing first and second flexible substrates to the first groove and the adhesive; fabricating an upper array substrate on the first flexible substrate and a lower array substrate on the second flexible substrate; bonding the upper array substrate to the lower array substrate and injecting a liquid crystal; and peeling the first and second flexible substrates from the first and second jig substrates.
摘要:
A fabricating method of a flexible display device includes the steps of providing an adhesive layer including a first adhesive material on a first surface of a support film, a second adhesive material on a second surface of the support film such that an adhesive strength of the second adhesive material is lower than an adhesive strength of the first adhesive material, and a third adhesive material encompassing an edge of the second adhesive material such that an adhesive strength of the third adhesive material is higher than the adhesive strength of the second adhesive material; a first passivation film adhered to the first surface of the support film with the first adhesive material therebetween; and a second passivation film adhered to the second surface of the support film with the second adhesive material and the third adhesive material therebetween; peeling the first passivation film from the adhesive layer; adhering a rigid substrate to the first adhesive material; peeling the second passivation film from the adhesive layer; and adhering a flexible substrate onto the second and third adhesive materials.
摘要:
An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
摘要:
An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.
摘要:
An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.
摘要:
An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.
摘要:
A method for forming an alignment layer is disclosed, to prevent light leakage generated by a physical contact between a rubbing roll and a substrate, which includes preparing a substrate; coating an alignment material on the substrate, for initial alignment of liquid crystal; applying an electric field or a magnetic field to the alignment material, for determination of alignment direction in the alignment material; and curing the alignment material.
摘要:
The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the fabricating process. A fabricating method of a liquid crystal display panel includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode formed thereon; forming an amorphous silicon film on the gate insulating film; forming an insulating pattern on the amorphous silicon film; crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively.
摘要:
A liquid crystal display device comprising a substrate; a first metal layer including an aluminum alloy having a first refractory metal with a first melting temperature over the substrate; and a second metal layer including a pure aluminum or an aluminum alloy having a second refractory metal with a second melting temperature lower than the first melting temperature over the first metal layer. The above liquid crystal display device of the present invention prevents the occurrence of hillocks on the aluminum gate metal. A method of manufacturing a liquid crystal display device is disclosed including the steps of forming a first metal layer of an aluminum alloy including a refractory metal having a first melting temperature on a substrate; and forming a second metal layer of a pure aluminum or an aluminum alloy including a refractory metal having a second melting temperature lower than the first melting temperature on the first metal layer.
摘要:
A method for forming an alignment layer is disclosed, to prevent light leakage generated by a physical contact between a rubbing roll and a substrate, which includes preparing a substrate; coating an alignment material on the substrate, for initial alignment of liquid crystal; applying an electric field or a magnetic field to the alignment material, for determination of alignment direction in the alignment material; and curing the alignment material.