摘要:
We describe an input buffer having a stabilized operating point and an associated method. An input buffer may include a first differential amplifying unit to generate a first output signal having a first operating point and a second differential amplifying unit to generate a second output signal having a second operating point. An output control circuit varies respective weights of the first and second output signals responsive to an output control signal. The first differential amplifying unit may operate responsive to a reference voltage and an input voltage signal. The second differential amplifying unit may operate responsive to the reference voltage and the input voltage signal. The first operating point may be relatively higher than the second operating point.
摘要:
We describe an input buffer having a stabilized operating point and an associated method. An input buffer may include a first differential amplifying unit to generate a first output signal having a first operating point and a second differential amplifying unit to generate a second output signal having a second operating point. An output control circuit varies respective weights of the first and second output signals responsive to an output control signal. The first differential amplifying unit may operate responsive to a reference voltage and an input voltage signal. The second differential amplifying unit may operate responsive to the reference voltage and the input voltage signal. The first operating point may be relatively higher than the second operating point.
摘要:
Provided are a circuit and method for sampling a valid command using a valid address window extended for a high-speed operation in a double pumped address scheme memory device. A method for extending the valid address window includes: inputting a valid command signal and a first address signal at the first cycle of a clock signal; inputting a second address signal at the second cycle of the clock signal; generating a decoded command signal and extended first and second internal address signals respectively in response to the command signal and the address signals; and latching and decoding the extended first and second internal address signals in response to the decoded command signal.
摘要:
Provided are a circuit and method for sampling a valid command using a valid address window extended for a high-speed operation in a double pumped address scheme memory device. A method for extending the valid address window includes: inputting a valid command signal and a first address signal at the first cycle of a clock signal; inputting a second address signal at the second cycle of the clock signal; generating a decoded command signal and extended first and second internal address signals respectively in response to the command signal and the address signals; and latching and decoding the extended first and second internal address signals in response to the decoded command signal.
摘要:
Provided are a circuit and method for sampling a valid command using a valid address window extended for a high-speed operation in a double pumped address scheme memory device. A method for extending the valid address window includes: inputting a valid command signal and a first address signal at the first cycle of a clock signal; inputting a second address signal at the second cycle of the clock signal; generating a decoded command signal and extended first and second internal address signals respectively in response to the command signal and the address signals; and latching and decoding the extended first and second internal address signals in response to the decoded command signal.
摘要:
Semiconductor devices, a system including said semiconductor devices and methods thereof are provided. An example semiconductor device may receive data scheduled for transmission, scramble an order of bits within the received data, the scrambled order arranged in accordance with a given pseudo-random sequence. The received data may be balanced such that a difference between a first number of the bits within the received data equal to a first logic level and a second number of bits within the received data equal to a second logic level is below a threshold. The balanced and scrambled received data may then be transmitted. The example semiconductor device may perform the scrambling and balancing operations in any order. Likewise, on a receiving end, another semiconductor device may decode the original data by unscrambling and unbalancing the transmitted data. The unscrambling and unbalancing operations may be performed in an order based upon the order in which the transmitted data is scrambled and balanced.
摘要:
Semiconductor devices, a system including said semiconductor devices and methods thereof are provided. An example semiconductor device may receive data scheduled for transmission, scramble an order of bits within the received data, the scrambled order arranged in accordance with a given pseudo-random sequence. The received data may be balanced such that a difference between a first number of the bits within the received data equal to a first logic level and a second number of bits within the received data equal to a second logic level is below a threshold. The balanced and scrambled received data may then be transmitted. The example semiconductor device may perform the scrambling and balancing operations in any order. Likewise, on a receiving end, another semiconductor device may decode the original data by unscrambling and unbalancing the transmitted data. The unscrambling and unbalancing operations may be performed in an order based upon the order in which the transmitted data is scrambled and balanced.
摘要:
A circuit including a voltage boost circuit coupled to a first node and a second node, and configured to apply a boosted first node voltage to the second node; and an inverter circuit coupled to the first node, the second node, and a third node, and configured to generate a signal on the third node in response to the signals on the first node and the second node.
摘要:
Provided is a semiconductor device capable of controlling an on-die-termination (ODT) circuit and an off-chip-driver (OCD) circuit and a control method used by the semiconductor device. The semiconductor device includes a control code generation unit generating a control code in response to a control signal, an addition unit adding an adjustment code to the control code to produce an adjusted control code, and an ODT circuit, wherein an impedance of the ODT circuit is adjusted in response to the adjusted control code. The semiconductor device can adjust the control code more precisely by adding or subtracting the adjustment code to or from the control code. Accordingly, the impedance of an OCD circuit or ODT circuit can be adjusted more precisely.
摘要:
Provided is a semiconductor device capable of controlling an on-die-termination (ODT) circuit and an off-chip-driver (OCD) circuit and a control method used by the semiconductor device. The semiconductor device includes a control code generation unit generating a control code in response to a control signal, an addition unit adding an adjustment code to the control code to produce an adjusted control code, and an ODT circuit, wherein an impedance of the ODT circuit is adjusted in response to the adjusted control code. The semiconductor device can adjust the control code more precisely by adding or subtracting the adjustment code to or from the control code. Accordingly, the impedance of an OCD circuit or ODT circuit can be adjusted more precisely.