摘要:
Inductors used for impedance matching in the radio frequency integrated circuits is disclosed. In the integrated inductor device according to the present invention, an additional electrode is arranged in surroundings of an inductor metal line, and the reverse bias voltage is applied to the region between the substrate and the electrode so as to form a depletion layer. Therefore, the substrate biasing is effected and thus an inductor having improved performance can be formed by decreasing the parasitic capacitance between the inductor metal line and the substrate. The present invention can also be applied to another semiconductor device having metal lines and pads.
摘要:
An inductor device with a MOS transistor internally installed is disclosed, in which an inductor can be arbitrarily connected in series or in parallel to the respective terminals of MOS transistors by applying a multi-layer wiring technique, thereby reducing the chip area. Within an inductor structure, MOS transistors which have an active region width of W .mu.m are formed in the number of n, and an inductor wire is connected to an arbitrary terminal of the MOS transistors by employing a multi-layer metal wiring process. Thus the inductor is connected to an arbitrary terminal of the MOS transistors in series. Thus an inductor device in which MOS transistors having a channel width of W.times.n .mu.m are internally installed is formed.
摘要翻译:公开了一种内置MOS晶体管的电感器件,其中通过施加多层布线技术,电感器可以与MOS晶体管的各个端子串联或并联连接,从而减小芯片面积。 在电感器结构中,以n个数量形成有效区宽度为W m m的MOS晶体管,并且通过采用多层金属布线工艺将电感器线连接到MOS晶体管的任意端。 因此,电感器串联连接到MOS晶体管的任意端子。 因此,形成其内部安装有沟道宽度为Wxnμm的MOS晶体管的电感器件。
摘要:
A method for fabricating an inductor device includes the steps of forming a plurality of trenches in a substrate by selectively etching the substrate, implanting dopants into sidewalls and bottom portion of each trench, forming an oxide layer by oxidizing the trenches and the substrate and simultaneously forming a doped layer in the surroundings of the trenches by diffusing the dopants into the substrate, and forming a dielectric layer on a resultant structure to fill the entrance of the trenches, thereby forming air-gap layers inside the trenches, thereby reducing a parasitic capacitance and a magnetic coupling.
摘要:
Provided is a wireless transceiving apparatus for variability of signal processing band, in which at least one resonator of an analog processor and a VCO are simultaneously controlled using a frequency synthesizer, and a frequency of the VCO and a resonance frequency of the analog processor are controlled to have a rational number ratio, thereby capable of varying the signal processing band. The wireless transceiving apparatus includes: an analog processor having a plurality of resonators on a path of transmission/reception signals, for performing analog signal processing; a digital processor for performing digital signal processing on an output signal of the analog processor or data to be transmitted to the analog processor; and a frequency synthesizer for providing a local oscillation (LO) frequency and a controlling signal to the resonators of the analog processor so as to vary a signal processing band of the analog processor.
摘要:
There is provided a transformer for varying an inductance value, which adjusts a tuning range of the inductance without decrease of the inductor's capability by selectively connecting switches to inductors and controls an amount of magnetic flux. And the transformer consists of multiple inductors formed on a semiconductor substrate, which including N number of metal lines, N number of ports made by twisting the metal lines in the form of a symmetric circuit, wherein a certain number of ports among the N number of ports, which are connected to switch elements.
摘要:
Provided is a wireless transceiving apparatus for variability of signal processing band, in which at least one resonator of an analog processor and a VCO are simultaneously controlled using a frequency synthesizer, and a frequency of the VCO and a resonance frequency of the analog processor are controlled to have a rational number ratio, thereby capable of varying the signal processing band. The wireless transceiving apparatus includes: an analog processor having a plurality of resonators on a path of transmission/reception signals, for performing analog signal processing; a digital processor for performing digital signal processing on an output signal of the analog processor or data to be transmitted to the analog processor; and a frequency synthesizer for providing a local oscillation (LO) frequency and a controlling signal to the resonators of the analog processor so as to vary a signal processing band of the analog processor.
摘要:
There is provided a transformer for varying an inductance value, which adjusts a tuning range of the inductance without decrease of the inductor's capability by selectively connecting switches to inductors and controls an amount of magnetic flux. And the transformer consists of multiple inductors formed on a semiconductor substrate, which including N number of metal lines, N number of ports made by twisting the metal lines in the form of a symmetric circuit, wherein a certain number of ports among the N number of ports, which are connected to switch elements.
摘要:
Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.
摘要:
Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.
摘要:
Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.