公开(公告)号：US3676775A

公开(公告)日：1972-07-11

申请号：US3676775D

申请日：1971-05-07

Applicant: IBM

Inventor： DUPNOCK ANDREW ,  GOREY EDWARD F ,  KEENAN WILLIAM A

IPC: G01N27/04 ,  G01R31/26 ,  G01R27/14

CPC classification number: G01R31/2637 ,  G01N27/041

Abstract: The method for measuring the bulk resistivity of an epitaxial semiconductor layer on a monocrystalline semiconductor base with a 4-point probe apparatus wherein the base has at least two high conductivity diffused regions, positioning two current probes directly over two separate diffused regions in contact with the surface of the epitaxial layer, placing two spaced voltage probes in contact with the epitaxial layer in a generally intermediate position relative to the current probes, inducing a current through the current probes and measuring the voltage drop between the voltage probes, calculating the bulk resistivity in accordance with the expression:

Abstract translation: 用4点探针装置测量单晶半导体基底上的外延半导体层的体电阻率的方法，其中基底具有至少两个高电导率扩散区域，将两个电流探针直接放置在与 外延层的表面，将两个间隔开的电压探针与外延层接触在相对于电流探针的大致中间位置，引起电流通过电流探针并测量电压探针之间的电压降，计算体电阻率 按照表达式：