公开(公告)号：US3676775A

公开(公告)日：1972-07-11

申请号：US3676775D

申请日：1971-05-07

Applicant: IBM

Inventor： DUPNOCK ANDREW ,  GOREY EDWARD F ,  KEENAN WILLIAM A

IPC: G01N27/04 ,  G01R31/26 ,  G01R27/14

CPC classification number: G01R31/2637 ,  G01N27/041

Abstract: The method for measuring the bulk resistivity of an epitaxial semiconductor layer on a monocrystalline semiconductor base with a 4-point probe apparatus wherein the base has at least two high conductivity diffused regions, positioning two current probes directly over two separate diffused regions in contact with the surface of the epitaxial layer, placing two spaced voltage probes in contact with the epitaxial layer in a generally intermediate position relative to the current probes, inducing a current through the current probes and measuring the voltage drop between the voltage probes, calculating the bulk resistivity in accordance with the expression:

Abstract translation: 用4点探针装置测量单晶半导体基底上的外延半导体层的体电阻率的方法，其中基底具有至少两个高电导率扩散区域，将两个电流探针直接放置在与 外延层的表面，将两个间隔开的电压探针与外延层接触在相对于电流探针的大致中间位置，引起电流通过电流探针并测量电压探针之间的电压降，计算体电阻率 按照表达式：

公开(公告)号：US3666548A

公开(公告)日：1972-05-30

申请号：US3666548D

申请日：1970-01-06

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L27/00 ,  G02B6/13 ,  H01L21/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/314 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L23/29 ,  H01L27/12 ,  H01L29/73 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L21/314 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76281 ,  H01L21/76297 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/114 ,  Y10S148/122 ,  Y10S438/95 ,  Y10T428/24802 ,  H01L2924/00

Abstract: A MONOCRYSTALLINE SEMICONDUCTOR BODY HAS A SINGLE, CONTINUOUS INSULATING LAYER EXTENDING FROM THE SURFACE TO A SELECTED DEPTH IN THE BODY AND SURROUNDING A REGION OF THE BODY TO DIELECTRICALLY ISOLATE THE REGION, WHICH HAS ONE SURFACE FORMED BY THE SURFACE OF THE BODY, FROM THE REMAINDER OF THE BODY. THE INSULATING LAYER IS PRODUCED BY BOMBARDING THE BODY WITH IONS, WHICH REACT WITH ATOMS IN THE BODY WHEN HEATED TO A PREDETERMINED TEMPERATURE, THE IONS ARE DIRECTED THROUGH AN OPENING IN A MASK AND A BEVELED SURFACE OF THE MASK SURROUNDING THE OPENING. THE BEVELED SURFACE CONTROLS THE PENETRATION OF THE IONS FROM THE SURFACE OF THE BODY INTO THE BODY TO THE SUB-SURFACE LAYER OF THE IONS DIRECTED THROUGH THE OPENING IN THE MASK. WHEN THE BODY IS HEATED TO THE SELECTED TEMPERATURE, THE EMBEDDED IONS REACT WITH THE ATOMS IN THE BODY TO PRODUCE THE INSULATING LAYER AND DIELECTRICALLY ISOLATE THE REGION, WHICH IS SURROUNDED BY THE SINGLE, CONTINUOUS LAYER, FROM THE REMAINDER OF THE BODY.

公开(公告)号：US3622382A

公开(公告)日：1971-11-23

申请号：US3622382D

申请日：1969-05-05

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L21/265 ,  H01L23/29 ,  B44D1/18 ,  H01L7/14

CPC classification number: H01L23/29 ,  H01L21/26533 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/085 ,  H01L2924/00

Abstract: A monocrystalline semiconductor body provided with a subsurface insulating layer. The layer is produced by bombarding the body with ions such as nitrogen, oxygen and carbon, for a time sufficient to produce a dense layer of embedded ions and at an energy level sufficient to result in ion penetration to the desired subsurface depth. The body is subsequently heated to a temperature sufficient to react the embedded ions with ions of the semiconductor body to produce an insulating layer.

公开(公告)号：US3590372A

公开(公告)日：1971-06-29

申请号：US3590372D

申请日：1968-12-26

Applicant: IBM

Inventor： DESANTIS DOMINIC P ,  DESSAUER RALPH G ,  GOREY EDWARD F ,  POPONIAK MICHAEL R ,  SCHNEIDER CHRISTIAN P ,  SCHUMANN PAUL A JR

IPC: G01R27/00 ,  G01N27/04 ,  G01R1/067 ,  G01R31/28 ,  H01L21/66 ,  G01R27/14

CPC classification number: G01R31/2831 ,  G01N27/041 ,  G01R1/06705

Abstract: A three-point probe is employed to determine the spreading resistance of a material with the spreading resistance probe, which is common to both the current source and a voltage measuring means, being moved into engagement with the material after the other two probes are in engagement with the material. The velocity with which each of the probes engages the material is controlled and is variable. To ascertain that a good contact has been made by the spreading resistance probe and the magnitude of the current flowing through the material from the current source, the voltage measuring means is connected across resistance means in the wire from the current source to the spreading resistance probe and current is directed through the resistance means in opposite directions by flowing through the material between the spreading resistance probe and one of the other two probes. After the magnitude of the current has been determined, the voltage measuring means is connected to the spreading resistance probe adjacent its contact to the material and to the other of the two probes, which is not connected to the current source, to determine the voltage drop through the material due to current from the current source flowing in opposite directions through the material. The amount of difference between the two voltage readings on the specimen indicates if good contact is achieved.

公开(公告)号：US3487301A

公开(公告)日：1969-12-30

申请号：US3487301D

申请日：1968-03-04

Applicant: IBM

Inventor： GARDNER EDWARD E ,  GOREY EDWARD F ,  SCHUMANN PAUL A JR ,  YEH TSU-HSING

IPC: G01N27/04 ,  G01R31/26 ,  G01R27/14

CPC classification number: G01N27/041 ,  G01R31/2644