公开(公告)号：US3590477A

公开(公告)日：1971-07-06

申请号：US3590477D

申请日：1968-12-19

Applicant: IBM

Inventor： CHEROFF GEORGE ,  HOCHBERG FREDERICK

IPC: H01L27/088 ,  H01L29/00 ,  B01J17/00 ,  H01G13/00

CPC classification number: H01L27/088 ,  H01L29/00 ,  Y10S438/91

Abstract: A method for fabricating electrical circuit components, field effect transistors, for example, in which the operating characteristics of the field effect devices are tailored by eliminating or passivating surface traps along the conduction channel. A layer of an active metal aluminum, for example, is deposited on the surface of an insulator, the latter being disposed in overlying relationship with the surface of a field effect transistor which has spaced source and drain regions. The active metal is disposed between the source and drain region. The transistor is subjected to heating for a time and temperature sufficient to passivate or eliminate surface traps. By heating for a temperature in a specified range, varying degrees of passivation can be attained. Heating in the absence of metallization does not alter the operating characteristics of the insulated gate field effect transistor.

公开(公告)号：US3445924A

公开(公告)日：1969-05-27

申请号：US3445924D

申请日：1965-06-30

Applicant: IBM

Inventor： CHEROFF GEORGE ,  HOCHBERG FREDERICK

IPC: H01L29/78 ,  H01L21/00 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/00 ,  H03K19/0944 ,  H01G13/00 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L27/088 ,  H01L29/00 ,  Y10S438/91