公开(公告)号：US3590477A

公开(公告)日：1971-07-06

申请号：US3590477D

申请日：1968-12-19

Applicant: IBM

Inventor： CHEROFF GEORGE ,  HOCHBERG FREDERICK

IPC: H01L27/088 ,  H01L29/00 ,  B01J17/00 ,  H01G13/00

CPC classification number: H01L27/088 ,  H01L29/00 ,  Y10S438/91

Abstract: A method for fabricating electrical circuit components, field effect transistors, for example, in which the operating characteristics of the field effect devices are tailored by eliminating or passivating surface traps along the conduction channel. A layer of an active metal aluminum, for example, is deposited on the surface of an insulator, the latter being disposed in overlying relationship with the surface of a field effect transistor which has spaced source and drain regions. The active metal is disposed between the source and drain region. The transistor is subjected to heating for a time and temperature sufficient to passivate or eliminate surface traps. By heating for a temperature in a specified range, varying degrees of passivation can be attained. Heating in the absence of metallization does not alter the operating characteristics of the insulated gate field effect transistor.

公开(公告)号：US3577047A

公开(公告)日：1971-05-04

申请号：US3577047D

申请日：1969-01-15

Applicant: IBM

Inventor： CHEROFF GEORGE

IPC: H01L29/00 ,  H01L31/113 ,  H01L11/14

CPC classification number: H01L31/1136 ,  H01L29/00

Abstract: A field-effect device is provided which comprises a field effect transistor of the insulated gate type. The device is capable of being used as a photodetector with a gain greater than unity. To this end, the transistor is biased in the ''''off'''' state by a substrate potential (source-to-substrate) resulting from the provision of an external voltage supply in the source-tosubstrate loop. Upon the radiation of the source and drain junctions in the transistor, a current is caused to flow between the source and drain electrodes which result in a current gain in excess of unity.

公开(公告)号：US3695855A

公开(公告)日：1972-10-03

申请号：US3695855D

申请日：1970-01-08

Applicant: IBM

Inventor： AINSLIE NORMAN G ,  CHEROFF GEORGE ,  JUNCTION HOPEWELL ,  GRAFF WILLIAM S ,  HOWARD JAMES KENT ,  ROSS RUPERT F

IPC: H01L21/00 ,  H01L21/28 ,  H05K1/09 ,  H01B1/02

CPC classification number: H01L21/00 ,  H01L21/28 ,  H05K1/09 ,  Y10S428/929 ,  Y10S428/938 ,  Y10T29/49004 ,  Y10T428/12396 ,  Y10T428/12458 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12847 ,  Y10T428/12903

Abstract: THIS INVENTION PROVIDES A MEANS OF INCREASING THE TIMETO-FAILURE OF DOPED CONDUCTIVE STRIPES BY DEPOSITING REGIONS OF DOPANT REJUVENANT UPON REGIONS IN THE STRIPE WHEREIN DOPANT DEPLETION IS MOST APT TO OCCUR UNDER CURRENT STRESS. THIS INVENTION ALSO PROVIDES A MEANS OF REJUVENATING REGIONS WHEREIN DOPANT DEPLETION HAS OCCURRED BY PERIODICALLY APPLYING HEAT TO A MICROELECTONIC CONFIGURATION CONTAINING DOPED CONDUCTIVE THIN FILMS FOR INTERCONNECTION PURPOSES, SAID THIN FILMS CONTAINING LOCAL, DISCONTINUOUS DEPOSITS OF DOPANT REJUVENANT OVER REGIONS WITHIN THE FILM WHEREIN TEMPERATURE GRADIENTS OR DIFFUSION BARRIERS ARISE UNDER CURRENT STRESS RESULTING IN MASS FLUX DIVERGENCES IN SAID REGIONS, I.E., A RESULTANT EFFLUX OF DOPANT FROM SAID REGION. APPLICATION OF HEAT IN THIS MANNER PERMITS DIFFUSION OF DOPANT REJUVENANT FROM THE LOCALIZED DOPANT REJUVENANT SOURCE INTO THE REGION FROM WHICH DOPANT HAS MIGRATED DURING SERVICE, THEREBY REJUVENATING THE MICROELECTRONIC CONFIGURATION AND ENABLING ITS CONTINUED USE.

公开(公告)号：US3445924A

公开(公告)日：1969-05-27

申请号：US3445924D

申请日：1965-06-30

Applicant: IBM

Inventor： CHEROFF GEORGE ,  HOCHBERG FREDERICK

IPC: H01L29/78 ,  H01L21/00 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/00 ,  H03K19/0944 ,  H01G13/00 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L27/088 ,  H01L29/00 ,  Y10S438/91