公开(公告)号：US3644700A

公开(公告)日：1972-02-22

申请号：US3644700D

申请日：1969-12-15

Applicant: IBM

Inventor： KRUPPA ROBERT W ,  WEBER EDWARD V ,  WOODARD OLLIE C

IPC: H01J37/30 ,  G05B19/39 ,  H01J37/304 ,  H01L21/00 ,  H01L21/027 ,  B23K9/08

CPC classification number: H01J37/3045 ,  G05B19/39 ,  G05B2219/42251 ,  H01L21/00

Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. For each chip to which the beam is applied, the position of the chip relative to a predetermined position is determined and the distance in these positions is utilized to control the position of the electron beam to insure that the desired pattern is formed on each of the chips separately. Furthermore, the position of the beam is periodically checked against a calibration grid to ascertain any deviations in the beam from its initial position. These differences are applied to properly position the beam.

公开(公告)号：US3612692A

公开(公告)日：1971-10-12

申请号：US3612692D

申请日：1968-11-21

Applicant: IBM

Inventor： KRUPPA ROBERT W ,  WARD ERNEST S

IPC: G01B11/06 ,  G05D5/03 ,  G01B9/02

CPC classification number: G05D5/03 ,  G01B11/0675

Abstract: An automatic thickness monitoring and control system and method for monitoring the growth of a dielectric film on a reflective substrate such as a silicon wafer during an RF sputtering deposition process and for stopping the deposition process when the film reaches a predetermined thickness. The successive minima (or maxima) in the interference pattern of light reflected from the wafer are counted to determine the film thickness and the sputtering is stopped at a predetermined count. In another embodiment, sputtering is stopped by interpolation between counts.