公开(公告)号：US3641516A

公开(公告)日：1972-02-08

申请号：US3641516D

申请日：1969-09-15

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  GATES HARLAN R ,  HENLE ROBERT A ,  PRICER WILBUR DAVID ,  MORTON ROBERT M ,  MASON JOHN W ,  NORTH WILLIAM D

IPC: F22B21/06 ,  G11C17/06 ,  G11C17/14 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L27/102 ,  G11C11/36 ,  G11C17/00

CPC classification number: H01L27/1021 ,  F22B21/065 ,  G11C17/06 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S257/926 ,  H01L2924/00

Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

Abstract translation: 一种只读存储器，具有在制造后被写入一次的能力。 存储器的单元能够通过将熔化电流引导到所选择的单元来融合或永久地改变。 电池是一个单片半导体器件，它包括一个正向偏置的二极管和一个反向偏置的二极管，以便形成背对背二极管。 反向二极管具有比正向二极管更低的反向击穿电压，并且未连接到任何剩余的电路元件的金属连接接触二极管接头之间的半导体器件。 熔断电流使金属半导体合金形成并短路反向二极管。