公开(公告)号：US3575740A

公开(公告)日：1971-04-20

申请号：US3575740D

申请日：1967-06-08

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  MASON JOHN W

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L7/36 ,  H01L3/00

CPC classification number: H01L21/31111 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/31055 ,  H01L21/76297 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S438/945 ,  Y10S438/977

Abstract: A METHOD FOR FABRICATING DIELECTRIC ISOLATED INTEGRATED DEVICES WHICH ALLOWS THE OF FORMATION OF A TRULY PLANAR SURFACE. THE METHOD INCLUDES ETCHING ISOLATION CHANNELS IN A SEMICONDUCTOR SUBSTRATE THROUGH A SUITABLE MASK. THE MASK PATTERN IS DESIGNED TO ENHANCE DEEPER ETCHING AT CERTAIN LOCATIONS IN THE ISOLATION CHANNELS. A DIELECTRIC LAYER IS FORMED OVER THE EXPOSED SURFACES OF THE ISOLATION CHANNELS AND A SEMICONDUCTOR MATERIAL IS GROWN IN THE CHANNELS. THE DEEPER ETCHED LOCATIONS WHICH ARE NOW FILLED WITH DIELECTRIC ISOLATION ARE USED AS A DEPTH GUIDE IN THE FORMATION OF A DIELECTRIC LAYER FROM THE SEMICONDUCTOR SUBSTRATE SURFACE OPPOSITE TO THE ONE FROM WHICH THE ETCHING TOOK PLACE. THE DEPTH GUIDE CAN BE USED IN EITHER A DEEP ETCH OR LAP-BACK PROCESS. THE LAST ISOLATION STEP IS THEN TO CONTINUE THE DIELECTRIC LAYER PAST THE DEPTH GUIDE TO THE MAJOR PORTION OF TSHE ISOLATION CHANNELS TO PRODUCE THE FULLY ISOLATED ISLANDS OF SEMICONDUCTOR MATERIAL IN THE SEMICONDUCTOR SUBSTRATE.

Abstract translation: 一种用于制造绝缘隔离集成器件的方法，其允许形成真正平坦的表面。 该方法包括通过合适的掩模蚀刻半导体衬底中的隔离通道。 掩模图案被设计为在隔离通道中的某些位置增强更深刻的蚀刻。 在隔离通道的暴露表面上形成电介质层，并且在通道中生长半导体材料。 现在填充介电隔离的较深的蚀刻位置被用作从与蚀刻发生的相反的半导体衬底表面形成电介质层的深度引导。 深度指导可用于深刻蚀或回圈过程。 然后，最后一个隔离步骤是使绝缘层继续穿过隔离通道的主要部分的深度导向，以在半导体衬底中产生完全隔离的半导体材料岛。

公开(公告)号：US3641516A

公开(公告)日：1972-02-08

申请号：US3641516D

申请日：1969-09-15

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  GATES HARLAN R ,  HENLE ROBERT A ,  PRICER WILBUR DAVID ,  MORTON ROBERT M ,  MASON JOHN W ,  NORTH WILLIAM D

IPC: F22B21/06 ,  G11C17/06 ,  G11C17/14 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L27/102 ,  G11C11/36 ,  G11C17/00

CPC classification number: H01L27/1021 ,  F22B21/065 ,  G11C17/06 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S257/926 ,  H01L2924/00

Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

Abstract translation: 一种只读存储器，具有在制造后被写入一次的能力。 存储器的单元能够通过将熔化电流引导到所选择的单元来融合或永久地改变。 电池是一个单片半导体器件，它包括一个正向偏置的二极管和一个反向偏置的二极管，以便形成背对背二极管。 反向二极管具有比正向二极管更低的反向击穿电压，并且未连接到任何剩余的电路元件的金属连接接触二极管接头之间的半导体器件。 熔断电流使金属半导体合金形成并短路反向二极管。