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1.发明授权Transistor and method of fabrication to minimize surface recombination effects 失效晶体管和制造方法以最小化表面复合效应
公开(公告)号：US3283223A
公开(公告)日：1966-11-01
申请号：US33388263
申请日：1963-12-27
Applicant: IBM
Inventor： DE WITT DAVID , STEHNEY THOMAS G
IPC: H01L21/00 , H01L21/22 , H01L27/082 , H01L29/00 , H01L29/73
CPC classification number: H01L29/00 , H01L21/00 , H01L21/22 , H01L27/082 , H01L29/73 , Y10S148/037 , Y10S148/145
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