Motor Control Device with Built-in Current Sensing Resistor and Power Transistor

    公开(公告)号:US20200186067A1

    公开(公告)日:2020-06-11

    申请号:US16692279

    申请日:2019-11-22

    Abstract: A motor control device with built-in shunt resistor and power transistor is disclosed, comprising a high-thermally conductive substrate; an electrically conductive circuit which is thermo-conductively installed on the high-thermally conductive substrate and includes a first thermal connection pad portion and a second thermal connection pad portion mutually spaced apart; a high power transistor conductively connected to the electrical conducive circuit; and a shunt resistor conductively connected to the high power transistor, respectively including a body whose thermal expansion coefficient is greater than that of the high-thermally conductive substrate, as well as a pair of welding portions extending from the body, in which the body has a prescribed width, and the width of the welding portion is greater than the prescribed width, and the body and the high-thermally conductive substrate are spaced apart such that, upon welding the welding portion to the first thermal connection pad portion and the second thermal connection pad portion, the thermal expansion stress occurring between the body and the high-thermally conductive substrate can be distributed and undertaken in the width direction.

    Motor control device with built-in current sensing resistor and power transistor

    公开(公告)号:US11043911B2

    公开(公告)日:2021-06-22

    申请号:US16692279

    申请日:2019-11-22

    Abstract: A motor control device with built-in shunt resistor and power transistor is disclosed, comprising a high-thermally conductive substrate; an electrically conductive circuit which is thermo-conductively installed on the high-thermally conductive substrate and includes a first thermal connection pad portion and a second thermal connection pad portion mutually spaced apart; a high power transistor conductively connected to the electrical conducive circuit; and a shunt resistor conductively connected to the high power transistor, respectively including a body whose thermal expansion coefficient is greater than that of the high-thermally conductive substrate, as well as a pair of welding portions extending from the body, in which the body has a prescribed width, and the width of the welding portion is greater than the prescribed width, and the body and the high-thermally conductive substrate are spaced apart such that, upon welding the welding portion to the first thermal connection pad portion and the second thermal connection pad portion, the thermal expansion stress occurring between the body and the high-thermally conductive substrate can be distributed and undertaken in the width direction.

    POWER MODULE
    3.
    发明公开
    POWER MODULE 审中-公开

    公开(公告)号:US20230396187A1

    公开(公告)日:2023-12-07

    申请号:US18129320

    申请日:2023-03-31

    CPC classification number: H02M7/53871 H05K7/14322 H02M7/003

    Abstract: A power module includes two power input terminals, two main substrates, a plurality of first switches, a plurality of second switches, and a bridge main unit. The bridge main unit is across the two main substrates, and includes a first bridge subunit and a second bridge subunit. Each of the first bridge subunit and the second bridge subunit includes a first conducting region on a bottom surface, and a second conducting region and a third conducting region on a top surface. The first conducting region transmits a current signal of a current path of a switch circuit formed by the power input terminals, the first switches, and the second switches. The second conducting region is connected to the control terminals of the first switches and the second switches. The third conducting region is connected to the output terminals of the first switches and the second switches.

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