公开(公告)号：US20190237556A1

公开(公告)日：2019-08-01

申请号：US16341055

申请日：2017-10-11

Applicant: Idemitsu Kosan Co., Ltd.

Inventor： Yuki TSURUMA ,  Emi KAWASHIMA ,  Yoshikazu NAGASAKI ,  Takashi SEKIYA ,  Yoshihiro UEOKA

IPC: H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/108

CPC classification number: H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/10 ,  H01L31/108 ,  Y02E10/50

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

公开(公告)号：US20190013389A1

公开(公告)日：2019-01-10

申请号：US16065943

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Emi KAWASHIMA ,  Takashi SEKIYA ,  Yuki TSURUMA ,  Yoshihiro UEOKA ,  Shigekazu TOMAI ,  Motohiro TAKESHIMA

IPC: H01L29/47 ,  H01L29/872 ,  H01L29/868

CPC classification number: H01L29/47 ,  H01L21/28 ,  H01L21/44 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/24 ,  H01L29/247 ,  H01L29/66143 ,  H01L29/868 ,  H01L29/872

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

公开(公告)号：US20200266304A1

公开(公告)日：2020-08-20

申请号：US16065239

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yoshihiro UEOKA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Motohiro TAKESHIMA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/786

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

公开(公告)号：US20190006473A1

公开(公告)日：2019-01-03

申请号：US16064210

申请日：2016-12-21

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yuki TSURUMA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yoshihiro UEOKA

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/02 ,  H01L29/812

CPC classification number: H01L29/247 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n