公开(公告)号：US20240287705A1

公开(公告)日：2024-08-29

申请号：US18655053

申请日：2024-05-03

申请人： II-VI ADVANCED MATERIALS, LLC

发明人： Ilya Zwieback ,  Varatharajan Rengarajan ,  Andrew E. Souzis ,  Gary E. Ruland

IPC分类号： C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  G02F1/00 ,  H01L29/36

CPC分类号： C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  C04B2235/3205 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/425 ,  C04B2235/722 ,  C04B2235/76 ,  C04B2235/9661 ,  G02F1/0063 ,  H01L29/36

摘要： The present disclosure generally relates to a physical vapor transport system including a chamber, a growth crucible positioned within the chamber, the growth crucible sealable with a growth crucible lid, and a doping capsule positioned within the growth crucible. The doping capsule includes an outer crucible fitted with an outer crucible lid, an inner crucible fitted with an inner crucible lid, the inner crucible fitted with the inner crucible lid positioned within the outer crucible, and a capillary channel formed by a first aperture in the outer crucible lid and a second aperture in the inner crucible lid.

公开(公告)号：US20240352617A1

公开(公告)日：2024-10-24

申请号：US18760286

申请日：2024-07-01

申请人： II-VI ADVANCED MATERIALS, LLC

发明人： Ilya ZWIEBACK ,  Varatharajan RENGARAJAN ,  Andrew E. Souzis ,  Gary Ruland

IPC分类号： C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  G02F1/00 ,  H01L29/36

CPC分类号： C30B23/02 ,  C01B32/956 ,  C04B35/573 ,  C04B35/65 ,  C30B29/36 ,  C04B2235/3205 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/425 ,  C04B2235/722 ,  C04B2235/76 ,  C04B2235/9661 ,  G02F1/0063 ,  H01L29/36

摘要： An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm−1 at a wavelength between about 400 nm to about 800 nm.