公开(公告)号：US08817262B2

公开(公告)日：2014-08-26

申请号：US13689540

申请日：2012-11-29

申请人： IMEC ,  Katholieke Universiteit Leuven

发明人： Janusz Bogdanowicz

IPC分类号： G01N21/55 ,  H01L21/66 ,  G01N21/17

CPC分类号： G01N21/55 ,  G01N21/1717 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/1731 ,  H01L22/12

摘要： A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration. The method may also include extracting thermal diffusivity, refraction index, absorption coefficient, and/or SRHF lifetime from these measurements.

摘要翻译： 公开了一种使用PMOR方法确定半导体区域的非活性掺杂浓度的方法。 在一个方面，该方法包括提供具有基本相同的已知植入浓度但是已知的变化的结深度的两个半导体区域。 该方法包括在这些半导体区域中的一个上确定注入的浓度。 然后半导体区域被部分激活。 然后对部分激活的半导体区域执行PMOR测量，以测量（a）反射探测信号的符号振幅作为结深度的函数，以及（b）DC探针反射率作为结深度的函数。 该方法包括从这些测量中提取有源掺杂浓度，然后使用确定的总注入浓度和有源掺杂浓度来计算非活性掺杂浓度。 该方法还可以包括从这些测量中提取热扩散率，折射率，吸收系数和/或SRHF寿命。

公开(公告)号：US08717570B2

公开(公告)日：2014-05-06

申请号：US13689473

申请日：2012-11-29

申请人： IMEC ,  Katholieke Universiteit Leuven

发明人： Janusz Bogdanowicz ,  Trudo Clarysse ,  Wilfried Vandervorst

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  G01N21/1717 ,  G01N21/9501

摘要： A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.

摘要翻译： 公开了用于光学确定基本上完全激活的掺杂分布的方法和系统。 基本上完全激活的掺杂分布的特征在于一组物理参数。 一方面，该方法包括获得包含完全激活的掺杂分布和参考的样品，并且获得包含完全激活的掺杂分布和参考的样品的光调制反射（PMOR）偏移曲线测量数据和DC反射率测量数据。 该方法还包括基于光调制的反射偏移曲线测量和DC反射率测量来确定掺杂分布的物理参数集合的值。

公开(公告)号：US20130335744A1

公开(公告)日：2013-12-19

申请号：US13689540

申请日：2012-11-29

申请人： IMEC ,  Katholieke Universiteit Leuven

发明人： Janusz Bogdanowicz

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  G01N21/1717 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/1731 ,  H01L22/12

摘要： A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration. The method may also include extracting thermal diffusivity, refraction index, absorption coefficient, and/or SRHF lifetime from these measurements.

摘要翻译： 公开了一种使用PMOR方法确定半导体区域的非活性掺杂浓度的方法。 在一个方面，该方法包括提供具有基本相同的已知植入浓度但是已知的变化的结深度的两个半导体区域。 该方法包括在这些半导体区域中的一个上确定注入的浓度。 然后半导体区域被部分激活。 然后对部分激活的半导体区域执行PMOR测量，以测量（a）反射探测信号的符号振幅作为结深度的函数，以及（b）DC探针反射率作为结深度的函数。 该方法包括从这些测量中提取有源掺杂浓度，然后使用确定的总注入浓度和有源掺杂浓度来计算非活性掺杂浓度。 该方法还可以包括从这些测量中提取热扩散率，折射率，吸收系数和/或SRHF寿命。

公开(公告)号：US08634080B2

公开(公告)日：2014-01-21

申请号：US13744880

申请日：2013-01-18

申请人： IMEC ,  Katholieke Universiteit Leuven

发明人： Janusz Bogdanowicz

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  G01N21/1717

摘要： A method for determining an active dopant concentration profile of a semiconductor substrate based on optical measurements is disclosed. The active dopant concentration profile includes a concentration level and a junction depth. In one aspect, the method includes obtaining a photomodulated optical reflectance (PMOR) amplitude offset curve and a PMOR phase offset curve for the semiconductor substrate based on PMOR measurements, determining a decay length parameter based on a first derivative of the amplitude offset curve, determining a wavelength parameter based on a first derivative of the phase offset curve, and determining, from the decay length parameter and the wavelength parameter, the concentration level and the junction depth of the active dopant concentration profile.

摘要翻译： 公开了一种基于光学测量来确定半导体衬底的有源掺杂浓度分布的方法。 活性掺杂剂浓度分布包括浓度水平和结深度。 一方面，该方法包括基于PMOR测量获得半导体衬底的光调制光反射（PMOR）幅度偏移曲线和PMOR相位偏移曲线，基于振幅偏移曲线的一阶导数确定衰减长度参数，确定 基于相位偏移曲线的一阶导数的波长参数，以及根据衰减长度参数和波长参数确定活性掺杂剂浓度分布的浓度水平和结深度。

公开(公告)号：US10014178B2

公开(公告)日：2018-07-03

申请号：US15354489

申请日：2016-11-17

申请人： IMEC VZW

发明人： Wilfried Vandervorst ,  Janusz Bogdanowicz

IPC分类号： H01L21/00 ,  H01L21/268 ,  H01L21/8234 ,  H01L21/225 ,  H01L29/06 ,  H01L21/02

CPC分类号： H01L21/268 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/2258 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/66795

摘要： The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.

公开(公告)号：US20220018781A1

公开(公告)日：2022-01-20

申请号：US17371609

申请日：2021-07-09

申请人： IMEC VZW

发明人： Thomas Nuytten ,  Janusz Bogdanowicz

IPC分类号： G01N21/65 ,  H01L21/66

摘要： A method and apparatus are provided for a spectroscopic measurement for determining a lateral recess depth in the sidewall of a microstructure. The structure is formed on a larger substrate with the sidewall in an upright position relative to the substrate, and the recess extends essentially parallel to the substrate. The recess may be an etch depth obtained by etching a first layer relative to two adjacent layers, the layers oriented parallel to the substrate, the etch process progressing inward from the sidewall. An incident energy beam falling on the structure generates a spectroscopic response captured and processed respectively by a detector and a processing unit. The response comprises one or more peaks related to the material or materials of the substrate and the structure. According to the method, a parameter is derived from said one or more peaks, that is representative of the lateral recess depth.

公开(公告)号：US20170178910A1

公开(公告)日：2017-06-22

申请号：US15354489

申请日：2016-11-17

申请人： IMEC VZW

发明人： Wilfried Vandervorst ,  Janusz Bogdanowicz

IPC分类号： H01L21/268 ,  H01L21/02 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/225

CPC分类号： H01L21/268 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/2258 ,  H01L21/823431 ,  H01L29/0665

摘要： The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.