公开(公告)号：US20220065895A1

公开(公告)日：2022-03-03

申请号：US17414207

申请日：2019-09-23

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Kristof Paredis ,  Jonathan Op de Beeck ,  Claudia Fleischmann ,  Wilfried Vandervorst

IPC: G01Q10/06 ,  G01Q60/54 ,  G01Q20/02

Abstract: Example embodiments relate to methods and apparatuses for aligning a probe for scanning probe microscopy (SPM) to the tip of a pointed sample. One embodiments includes a method for aligning an SPM probe to an apex area of a free-standing tip of a pointed sample. The method includes providing an SPM apparatus that includes the SPM probe; a sample holder; a drive mechanism; and detection, control, and representation tools for acquiring and representing an image of a surface scanned by the SPM probe. The method also includes mounting the sample on the sample holder. Further, the method includes positioning the probe tip of the SPM, determining a 2-dimensional area that includes the pointed sample, performing an SPM acquisition scan, evaluating and acquired image, and placing the SPM probe in a position where it is aligned with an apex area of the free-standing tip of the pointed sample.

公开(公告)号：US20170178910A1

公开(公告)日：2017-06-22

申请号：US15354489

申请日：2016-11-17

Applicant: IMEC VZW

Inventor： Wilfried Vandervorst ,  Janusz Bogdanowicz

IPC: H01L21/268 ,  H01L21/02 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/225

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/2258 ,  H01L21/823431 ,  H01L29/0665

Abstract: The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.

公开(公告)号：US11125805B2

公开(公告)日：2021-09-21

申请号：US16518730

申请日：2019-07-22

Applicant: IMEC VZW

Inventor： Kristof Paredis ,  Umberto Celano ,  Wilfried Vandervorst

IPC: G01R31/20 ,  G01R31/26 ,  G01N27/00

Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.

公开(公告)号：US20200006034A1

公开(公告)日：2020-01-02

申请号：US16455528

申请日：2019-06-27

Applicant: IMEC vzw

Inventor： Andreas Schulze ,  Wilfried Vandervorst

IPC: H01J37/244

Abstract: A method of characterizing a region in a sample under study, and related systems, is disclosed. In once aspect, the sample under study comprises a first region having first crystalline properties and a second region having second crystalline properties. The method comprises irradiating the sample under study with an electron beam, the average relative angle between the electron beam and the sample under study being selected so that a contribution in the backscattered or forward scattered signal of the first region is distinguishable from that of the second region. The method further comprises detecting the backscattered or forward scattered electrons, and deriving a characteristic of the first and/or the second region from the detected backscattered or forward scattered electrons. The instantaneous relative angle between the electron beam and the sample under study is modulated with a predetermined modulation frequency during the irradiating the sample under study with an electron beam. Detecting the backscattered or forward scattered electrons is performed at the predetermined modulation frequency.

公开(公告)号：US11549963B2

公开(公告)日：2023-01-10

申请号：US17414207

申请日：2019-09-23

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Kristof Paredis ,  Jonathan Op de Beeck ,  Claudia Fleischmann ,  Wilfried Vandervorst

IPC: G01Q10/06 ,  G01Q20/02 ,  G01Q60/54

Abstract: Example embodiments relate to methods and apparatuses for aligning a probe for scanning probe microscopy (SPM) to the tip of a pointed sample. One embodiments includes a method for aligning an SPM probe to an apex area of a free-standing tip of a pointed sample. The method includes providing an SPM apparatus that includes the SPM probe; a sample holder; a drive mechanism; and detection, control, and representation tools for acquiring and representing an image of a surface scanned by the SPM probe. The method also includes mounting the sample on the sample holder. Further, the method includes positioning the probe tip of the SPM, determining a 2-dimensional area that includes the pointed sample, performing an SPM acquisition scan, evaluating and acquired image, and placing the SPM probe in a position where it is aligned with an apex area of the free-standing tip of the pointed sample.

公开(公告)号：US10541108B2

公开(公告)日：2020-01-21

申请号：US15899905

申请日：2018-02-20

Applicant: IMEC VZW

Inventor： Umberto Celano ,  Kristof Paredis ,  Wilfried Vandervorst

IPC: H01J37/28 ,  B82Y40/00 ,  H01J37/22 ,  H01J37/304 ,  H01J37/305

Abstract: The disclosure is related to a method and apparatus for transmission electron microscopy wherein a TEM specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an SPM probe, and wherein the thinned area is subjected to an SPM acquisition step, using the same SPM probe or another probe.

公开(公告)号：US20190277881A1

公开(公告)日：2019-09-12

申请号：US16296068

申请日：2019-03-07

Applicant: IMEC vzw

Inventor： Kristof Paredis ,  Claudia Fleischmann ,  Wilfried Vandervorst

IPC: G01Q10/04 ,  G01Q60/24 ,  G01Q30/20

Abstract: The disclosed technology relates to a method and apparatus for correctly positioning a probe suitable for scanning probe microscopy (SPM). The probe is positioned relative to the apex region of a needle-shaped sample, such as a sample for atom probe tomography, in order to perform a SPM acquisition of the apex region to obtain an image of the region. In one aspect, the positioning takes place by an iterative process, starting from a position wherein one side plane of the pyramid-shaped SPM probe interacts with the sample tip. By controlled consecutive scans in two orthogonal directions, the SPM probe tip approaches and finally reaches a position wherein a tip area of the probe interacts with the sample tip's apex region.

公开(公告)号：US10746759B2

公开(公告)日：2020-08-18

申请号：US16296068

申请日：2019-03-07

Applicant: IMEC vzw

Inventor： Kristof Paredis ,  Claudia Fleischmann ,  Wilfried Vandervorst

IPC: G01Q10/04 ,  G01Q10/06 ,  G01Q30/20 ,  G01Q60/24 ,  H01J37/285

Abstract: The disclosed technology relates to a method and apparatus for correctly positioning a probe suitable for scanning probe microscopy (SPM). The probe is positioned relative to the apex region of a needle-shaped sample, such as a sample for atom probe tomography, in order to perform a SPM acquisition of the apex region to obtain an image of the region. In one aspect, the positioning takes place by an iterative process, starting from a position wherein one side plane of the pyramid-shaped SPM probe interacts with the sample tip. By controlled consecutive scans in two orthogonal directions, the SPM probe tip approaches and finally reaches a position wherein a tip area of the probe interacts with the sample tip's apex region.

公开(公告)号：US20200033395A1

公开(公告)日：2020-01-30

申请号：US16518730

申请日：2019-07-22

Applicant: IMEC VZW

Inventor： Kristof Paredis ,  Umberto Celano ,  Wilfried Vandervorst

IPC: G01R31/26

Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.

公开(公告)号：US10014178B2

公开(公告)日：2018-07-03

申请号：US15354489

申请日：2016-11-17

Applicant: IMEC VZW

Inventor： Wilfried Vandervorst ,  Janusz Bogdanowicz

IPC: H01L21/00 ,  H01L21/268 ,  H01L21/8234 ,  H01L21/225 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/2258 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/66795

Abstract: The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.