公开(公告)号：US09492841B2

公开(公告)日：2016-11-15

申请号：US13847457

申请日：2013-03-19

Applicant: IMEC ,  St. Petersburg Electrotechnical University

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: B05D1/20 ,  B32B37/15 ,  B32B18/00 ,  B32B27/04 ,  B32B27/28 ,  H05K1/03 ,  H01L21/02 ,  H05K3/14 ,  C09D179/08 ,  C08G73/10

CPC classification number: B32B37/15 ,  B05D1/20 ,  B05D1/208 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20190135998A1

公开(公告)日：2019-05-09

申请号：US16230674

申请日：2018-12-21

Applicant: IMEC ,  St. Petersburg Electrotechnical University

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: C08J5/18 ,  B05D1/20 ,  H01L23/532

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

公开(公告)号：US20170021604A1

公开(公告)日：2017-01-26

申请号：US15285445

申请日：2016-10-04

Applicant: IMEC ,  St. Petersburg Electrotechnical University

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: B32B37/15 ,  B05D1/20 ,  B32B27/28

CPC classification number: C08J5/18 ,  B05D1/20 ,  B05D1/204 ,  B05D1/208 ,  B05D2505/50 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B37/15 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08G73/1067 ,  C08J2379/08 ,  C08J2483/02 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H01L23/5329 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20130251978A1

公开(公告)日：2013-09-26

申请号：US13847457

申请日：2013-03-19

Applicant: IMEC ,  ST. PETERSBURG ELECTROTECHNICAL UNIVERSITY

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: B32B37/15

CPC classification number: B32B37/15 ,  B05D1/20 ,  B05D1/208 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US11923198B2

公开(公告)日：2024-03-05

申请号：US17228295

申请日：2021-04-12

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Mikhail Krishtab ,  Silvia Armini

IPC: H01L21/027

CPC classification number: H01L21/0273

Abstract: In a first aspect, the present disclosure relates to a method for forming a patterning mask over a layer to be patterned, the method comprising: (a) providing a first layer over a substrate, the substrate comprising the layer to be patterned, the first layer being capable to bond with a monolayer comprising a compound comprising a functional group for bonding to the first layer and a removable organic group, (b) bonding the monolayer to the first layer, (c) exposing the monolayer to an energy beam, thereby forming a pattern comprising a first area comprising the compound with the removable organic group and a second area comprising the compound not having the removable organic group, and (d) selectively depositing an amorphous carbon layer on top of the first area.

公开(公告)号：US10685833B2

公开(公告)日：2020-06-16

申请号：US16190921

申请日：2018-11-14

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Mikhail Krishtab ,  Silvia Armini ,  Ivo Stassen ,  Rob Ameloot

IPC: H01L21/02 ,  H01L21/768

Abstract: Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.

公开(公告)号：US20210375615A1

公开(公告)日：2021-12-02

申请号：US17228295

申请日：2021-04-12

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Mikhail Krishtab ,  Silvia Armini

IPC: H01L21/027

Abstract: In a first aspect, the present disclosure relates to a method for forming a patterning mask over a layer to be patterned, the method comprising: (a) providing a first layer over a substrate, the substrate comprising the layer to be patterned, the first layer being capable to bond with a monolayer comprising a compound comprising a functional group for bonding to the first layer and a removable organic group, (b) bonding the monolayer to the first layer, (c) exposing the monolayer to an energy beam, thereby forming a pattern comprising a first area comprising the compound with the removable organic group and a second area comprising the compound not having the removable organic group, and (d) selectively depositing an amorphous carbon layer on top of the first area.

公开(公告)号：US20190198391A1

公开(公告)日：2019-06-27

申请号：US16190921

申请日：2018-11-14

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Mikhail Krishtab ,  Silvia Armini ,  Ivo Stassen ,  Rob Ameloot

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/02

Abstract: Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.