公开(公告)号：US09520291B2

公开(公告)日：2016-12-13

申请号：US14757671

申请日：2015-12-23

Applicant: IMEC VZW

Inventor： Zheng Tao ,  Kaidong Xu

IPC: H01L21/306 ,  H01L21/225 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/308 ,  H01L21/266 ,  H01L21/84

CPC classification number: H01L21/2253 ,  H01L21/225 ,  H01L21/266 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3085 ,  H01L21/31144 ,  H01L21/8238 ,  H01L21/823821 ,  H01L21/845

Abstract: According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a first region and a second region, the method comprising: providing a first implantation mask covering the first region of the semiconductor structure, the first implantation mask including a first sacrificial layer, wherein the first sacrificial layer is formed as a spin-on-carbon (SOC) layer, and a second sacrificial layer, wherein the second sacrificial layer is formed as a spin-on-glass (SOG) layer; subjecting the semiconductor structure to an ion implantation process wherein an extension of the first implantation mask is such that ion implantation in the first region is counteracted and ion implantation in the second region is allowed wherein the second region is implanted; forming a third sacrificial layer covering the second region of the semiconductor structure, wherein the third sacrificial layer includes carbon; removing the second sacrificial layer at the first region by etching, wherein the third sacrificial layer protects the second region from being affected by said etching; and removing the first sacrificial layer at the first region and the third sacrificial layer at the second region by etching.

Abstract translation: 根据本发明构思的一个方面，提供了一种在包括第一区域和第二区域的半导体结构中提供注入区域的方法，所述方法包括：提供覆盖半导体结构的第一区域的第一注入掩模， 所述第一注入掩模包括第一牺牲层，其中所述第一牺牲层形成为自旋碳（SOC）层，以及第二牺牲层，其中所述第二牺牲层形成为旋涂玻璃（spin-on-glass） SOG）层; 对所述半导体结构进行离子注入工艺，其中所述第一注入掩模的延伸使得抵消所述第一区域中的离子注入并且允许在所述第二区域中的离子注入，其中所述第二区域被注入; 形成覆盖半导体结构的第二区域的第三牺牲层，其中第三牺牲层包括碳; 通过蚀刻去除第一区域处的第二牺牲层，其中第三牺牲层保护第二区域免受所述蚀刻的影响; 以及通过蚀刻在第一区域和第二区域去除第一牺牲层。

公开(公告)号：US20160196975A1

公开(公告)日：2016-07-07

申请号：US14757671

申请日：2015-12-23

Applicant: IMEC VZW

Inventor： Zheng Tao ,  Kaidong Xu

IPC: H01L21/225 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/2253 ,  H01L21/225 ,  H01L21/266 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3085 ,  H01L21/31144 ,  H01L21/8238 ,  H01L21/823821 ,  H01L21/845

Abstract: According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a first region and a second region, the method comprising: providing a first implantation mask covering the first region of the semiconductor structure, the first implantation mask including a first sacrificial layer, wherein the first sacrificial layer is formed as a spin-on-carbon (SOC) layer, and a second sacrificial layer, wherein the second sacrificial layer is formed as a spin-on-glass (SOG) layer; subjecting the semiconductor structure to an ion implantation process wherein an extension of the first implantation mask is such that ion implantation in the first region is counteracted and ion implantation in the second region is allowed wherein the second region is implanted; forming a third sacrificial layer covering the second region of the semiconductor structure, wherein the third sacrificial layer includes carbon; removing the second sacrificial layer at the first region by etching, wherein the third sacrificial layer protects the second region from being affected by said etching; and removing the first sacrificial layer at the first region and the third sacrificial layer at the second region by etching.

Abstract translation: 根据本发明构思的一个方面，提供了一种在包括第一区域和第二区域的半导体结构中提供注入区域的方法，所述方法包括：提供覆盖半导体结构的第一区域的第一注入掩模， 所述第一注入掩模包括第一牺牲层，其中所述第一牺牲层形成为自旋碳（SOC）层，以及第二牺牲层，其中所述第二牺牲层形成为旋涂玻璃（spin-on-glass） SOG）层; 对所述半导体结构进行离子注入工艺，其中所述第一注入掩模的延伸使得抵消所述第一区域中的离子注入并且允许在所述第二区域中的离子注入，其中所述第二区域被注入; 形成覆盖半导体结构的第二区域的第三牺牲层，其中第三牺牲层包括碳; 通过蚀刻去除第一区域处的第二牺牲层，其中第三牺牲层保护第二区域免受所述蚀刻的影响; 以及通过蚀刻在第一区域和第二区域去除第一牺牲层。