公开(公告)号：US20140374867A1

公开(公告)日：2014-12-25

申请号：US14309712

申请日：2014-06-19

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Koen De Munck ,  Tomislav Resetar

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/102

CPC classification number: H01L31/03529 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/102

Abstract: Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions.

Abstract translation: 这里描述的是钉扎光电二极管像素结构，其具有相对于像素区独立偏置的p型衬底，以在n型区域和形成在衬底上的p型区域之间提供雪崩区域。 这种被钉扎的光电二极管像素可用于在低光照条件下使用的成像传感器。

公开(公告)号：US09537028B2

公开(公告)日：2017-01-03

申请号：US14309712

申请日：2014-06-19

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Koen De Munck ,  Tomislav Resetar

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/102

CPC classification number: H01L31/03529 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/102

Abstract: Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions.

Abstract translation: 这里描述的是钉扎光电二极管像素结构，其具有相对于像素区独立偏置的p型衬底，以在n型区域和形成在衬底上的p型区域之间提供雪崩区域。 这种被钉扎的光电二极管像素可用于在低光照条件下使用的成像传感器。

公开(公告)号：US09313428B2

公开(公告)日：2016-04-12

申请号：US14574383

申请日：2014-12-17

Applicant: IMEC VZW

Inventor： Jonathan Borremans ,  Koen De Munck

IPC: H01L27/148 ,  H04N5/359 ,  H04N5/355 ,  H04N5/357 ,  H04N5/3745

CPC classification number: H04N5/3591 ,  H04N5/3559 ,  H04N5/3575 ,  H04N5/3598 ,  H04N5/37452

Abstract: Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of the floating diffusion capacitor. Readout at a high sensitivity level is provided when the floating diffusion capacitor is not saturated and readout at a lower sensitivity level is provided when there is saturation and subsequent overflow to the overflow region. Connection of the floating diffusion capacitor to the overflow capacitor shares the charge over the combined capacitance of the two capacitors and provides readout at a lower sensitivity without loss of charge.

Abstract translation: 这里描述的像素读出电路根据由电路中的像素光电二极管产生的电子量提供两个灵敏度级别的读出。 浮动扩散电容器用于将电荷存储到由其电容确定的饱和值，并且溢出电容器设置在用于存储高于浮动扩散电容器的饱和值的电荷的溢出区域中。 当浮动扩散电容器不饱和并且当存在饱和并且随后溢出到溢出区域时，在较低灵敏度级别读出时，提供高灵敏度级别的读出。 将浮动扩散电容器连接到溢出电容器上的两个电容器的组合电容共享电荷，并以较低的灵敏度提供读数而不会损失电荷。

公开(公告)号：US20150189199A1

公开(公告)日：2015-07-02

申请号：US14574383

申请日：2014-12-17

Applicant: IMEC VZW

Inventor： Jonathan Borremans ,  Koen De Munck

IPC: H04N5/359

CPC classification number: H04N5/3591 ,  H04N5/3559 ,  H04N5/3575 ,  H04N5/3598 ,  H04N5/37452

Abstract: Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of the floating diffusion capacitor. Readout at a high sensitivity level is provided when the floating diffusion capacitor is not saturated and readout at a lower sensitivity level is provided when there is saturation and subsequent overflow to the overflow region. Connection of the floating diffusion capacitor to the overflow capacitor shares the charge over the combined capacitance of the two capacitors and provides readout at a lower sensitivity without loss of charge.

Abstract translation: 这里描述的像素读出电路根据由电路中的像素光电二极管产生的电子量提供两个灵敏度级别的读出。 浮动扩散电容器用于将电荷存储到由其电容确定的饱和值，并且溢出电容器设置在用于存储高于浮动扩散电容器的饱和值的电荷的溢出区域中。 当浮动扩散电容器不饱和并且当存在饱和并且随后溢出到溢出区域时，在较低灵敏度级别读出时，提供高灵敏度级别的读出。 将浮动扩散电容器连接到溢出电容器上的两个电容器的组合电容共享电荷，并以较低的灵敏度提供读数而不会损失电荷。