公开(公告)号：US10170687B2

公开(公告)日：2019-01-01

申请号：US15387350

申请日：2016-12-21

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Mauricio Manfrini ,  Christoph Adelmann

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: The disclosed technology relates generally to magnetic devices, and more particularly to spin torque majority gate devices such as spin torque magnetic devices (STMG), and to methods of fabricating the same. In one aspect, a majority gate device includes a plurality of input zones and an output zone. A magnetic tunneling junction (MTJ) is formed in each of the input zones and the output zone, where the MTJ includes a non-magnetic layer interposed between a free layer stack and a hard layer. The free layer stack in turn includes a bulk perpendicular magnetic anisotropy (PMA) layer on a seed layer, a magnetic layer formed on and in contact with the bulk PMA layer, and a non-magnetic layer formed on the magnetic layer. Each of the bulk PMA layer and the seed layer is configured as a common layer for each of the input zones and the output zone.

公开(公告)号：US20150179925A1

公开(公告)日：2015-06-25

申请号：US14575743

申请日：2014-12-18

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Taiebeh Tahmasebi ,  Mauricio Manfrini ,  Sven Cornelissen

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic multilayer stack for a magnetoresistance device and a method of forming the multilayer stack is disclosed. In one aspect, the magnetic multilayer stack comprises a composite soft layer having a non-magnetic layer sandwiched between a first magnetic layer formed of CoFeBN and a second magnetic layer formed of CoFeB.

Abstract translation: 公开了一种用于磁阻器件的磁性多层叠层及其形成方法。 一方面，磁性多层叠层包括复合软层，其具有夹在由CoFeBN形成的第一磁性层和由CoFeB形成的第二磁性层之间的非磁性层。

公开(公告)号：US10164077B2

公开(公告)日：2018-12-25

申请号：US15693243

申请日：2017-08-31

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Adrien Vaysset ,  Mauricio Manfrini

IPC: H01L29/66 ,  H03K19/23 ,  H03K19/18 ,  G11C11/16 ,  B82Y10/00 ,  H01L29/06

Abstract: The disclosed technology relates generally to spintronics, and more particularly to a magnetic majority gate device. In one aspect, a magnetic majority gate device includes a magnetic propagation layer and at least one input transducer. The magnetic propagation layer includes a plurality of magnetic buses configured to guide propagating magnetic domain walls along longitudinal directions corresponding to elongated directions of the magnetic buses. The plurality of magnetic buses includes a plurality of input magnetic buses, where each of the input magnetic buses has a corresponding input site configured to receive a corresponding input magnetic domain wall. At least one input transducer at a corresponding input site is configured to convert a digital input electrical signal into an input magnetic domain wall, such that a magnetization state of the input magnetic domain wall corresponds to a digital logic state of the digital input electrical signal. The at least one input transducer is configured to inject an in-plane electrical current into the corresponding input magnetic bus if the digital logic state is a predetermined digital logic state. The magnetic propagation layer includes a central region at which the magnetic buses converge and are joined together, such that the central region is configured for an interaction of input magnetic domain walls guided by two or more magnetic buses. The central region includes at least one magnetic constriction configured to locally restrict propagation of propagating magnetic domain walls.

公开(公告)号：US20180061970A1

公开(公告)日：2018-03-01

申请号：US15693243

申请日：2017-08-31

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Adrien Vaysset ,  Mauricio Manfrini

IPC: H01L29/66

CPC classification number: H01L29/66984 ,  B82Y10/00 ,  G11C11/161 ,  H01L29/0673 ,  H03K19/18 ,  H03K19/23

Abstract: The disclosed technology relates generally to spintronics, and more particularly to a magnetic majority gate device. In one aspect, a magnetic majority gate device includes a magnetic propagation layer and at least one input transducer. The magnetic propagation layer includes a plurality of magnetic buses configured to guide propagating magnetic domain walls along longitudinal directions corresponding to elongated directions of the magnetic buses. The plurality of magnetic buses includes a plurality of input magnetic buses, where each of the input magnetic buses has a corresponding input site configured to receive a corresponding input magnetic domain wall. At least one input transducer at a corresponding input site is configured to convert a digital input electrical signal into an input magnetic domain wall, such that a magnetization state of the input magnetic domain wall corresponds to a digital logic state of the digital input electrical signal. The at least one input transducer is configured to inject an in-plane electrical current into the corresponding input magnetic bus if the digital logic state is a predetermined digital logic state. The magnetic propagation layer includes a central region at which the magnetic buses converge and are joined together, such that the central region is configured for an interaction of input magnetic domain walls guided by two or more magnetic buses. The central region includes at least one magnetic constriction configured to locally restrict propagation of propagating magnetic domain walls.