Integrated semiconductor optical coupler

    公开(公告)号:US09791621B2

    公开(公告)日:2017-10-17

    申请号:US14971466

    申请日:2015-12-16

    Applicant: IMEC VZW

    Abstract: A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.

    Integrated photonic coupler
    2.
    发明授权

    公开(公告)号:US09632248B2

    公开(公告)日:2017-04-25

    申请号:US14580029

    申请日:2014-12-22

    Abstract: The present invention relates to an integrated photonic device comprising a photonic substrate, and an integrated waveguide provided in or on this substrate. The waveguide is adapted for conducting radiation of a predetermined wavelength. The device further comprises a sub-wavelength grating optically connected to the waveguide, which provides a first periodic variation of the refractive index in at least one first spatial direction. The device also comprises a diffracting grating arranged over the sub-wavelength grating for coupling radiation of the predetermined wavelength in and/or out of the integrated waveguide via the sub-wavelength grating. The diffracting grating provides a second periodic variation of the refractive index in at least one second spatial direction. The first periodic variation has a first pitch that is less than half of the predetermined wavelength, while the second periodic variation has a second pitch that is at least half of the predetermined wavelength.

    Integrated Photonic Coupler
    3.
    发明申请
    Integrated Photonic Coupler 有权
    集成光子耦合器

    公开(公告)号:US20150285996A1

    公开(公告)日:2015-10-08

    申请号:US14580029

    申请日:2014-12-22

    Abstract: The present invention relates to an integrated photonic device comprising a photonic substrate, and an integrated waveguide provided in or on this substrate. The waveguide is adapted for conducting radiation of a predetermined wavelength. The device further comprises a sub-wavelength grating optically connected to the waveguide, which provides a first periodic variation of the refractive index in at least one first spatial direction. The device also comprises a diffracting grating arranged over the sub-wavelength grating for coupling radiation of the predetermined wavelength in and/or out of the integrated waveguide via the sub-wavelength grating. The diffracting grating provides a second periodic variation of the refractive index in at least one second spatial direction. The first periodic variation has a first pitch that is less than half of the predetermined wavelength, while the second periodic variation has a second pitch that is at least half of the predetermined wavelength.

    Abstract translation: 本发明涉及一种集成光子器件,其包括光子衬底和设置在该衬底中或之上的集成波导。 波导适于进行预定波长的辐射。 该器件还包括与波导光学连接的亚波长光栅,其在至少一个第一空间方向上提供折射率的第一周期性变化。 该器件还包括布置在子波长光栅上的衍射光栅,用于将预定波长的辐射经由子波长光栅耦合到和/或离开集成波导。 衍射光栅在至少一个第二空间方向上提供折射率的第二周期性变化。 第一周期性变化具有小于预定波长的一半的第一间距,而第二周期性变化具有至少为预定波长的一半的第二间距。

    Integrated Semiconductor Optical Coupler
    4.
    发明申请
    Integrated Semiconductor Optical Coupler 有权
    集成半导体光耦合器

    公开(公告)号:US20160170139A1

    公开(公告)日:2016-06-16

    申请号:US14971466

    申请日:2015-12-16

    Applicant: IMEC VZW

    Abstract: A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.

    Abstract translation: 公开了一种用于制造集成半导体光子学器件的方法。 该方法可以包括提供第一衬底,其在其顶表面上具有适于支撑光学模式的单晶半导体层,并在单晶半导体层的平坦表面上形成均匀且适形的第一介电层。 该方法可以进一步包括在第一电介质层上提供电介质波导芯,电介质波导芯通过第一介电层光耦合到单晶半导体层的第一区域。 该方法还可以包括在电介质波导芯上沉积第二电介质层,从而覆盖电介质波导芯,并退火衬底以将氢驱出电介质波导芯。

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