公开(公告)号：US11476162B2

公开(公告)日：2022-10-18

申请号：US17038737

申请日：2020-09-30

Applicant: IMEC VZW

Inventor： Frank Holsteyns ,  Eric Beyne ,  Christophe Lorant ,  Simon Braun

IPC: H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L23/48

Abstract: A method is provided for dicing a semiconductor substrate into a plurality of dies, the semiconductor substrate having a front side including a plurality of device areas, a back side, and a plurality of through substrate vias. The method includes defining, from the front side, at least one trench to be formed between adjacent device areas, forming the at least one trench, from the front side of the semiconductor substrate, arranging a protective layer on the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, processing the back side of the semiconductor substrate to form at least one contact, the contact contacting at least one through substrate via, etching through the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, and dicing the semiconductor substrate into the plurality of dies.

公开(公告)号：US20210098299A1

公开(公告)日：2021-04-01

申请号：US17038737

申请日：2020-09-30

Applicant: IMEC VZW

Inventor： Frank Holsteyns ,  Eric Beyne ,  Christophe Lorant ,  Simon Braun

IPC: H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L23/48

Abstract: A method is provided for dicing a semiconductor substrate into a plurality of dies, the semiconductor substrate having a front side including a plurality of device areas, a back side, and a plurality of through substrate vias. The method includes defining, from the front side, at least one trench to be formed between adjacent device areas, forming the at least one trench, from the front side of the semiconductor substrate, arranging a protective layer on the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, processing the back side of the semiconductor substrate to form at least one contact, the contact contacting at least one through substrate via, etching through the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, and dicing the semiconductor substrate into the plurality of dies.

公开(公告)号：US20190291106A1

公开(公告)日：2019-09-26

申请号：US16363926

申请日：2019-03-25

Applicant: IMEC vzw

Inventor： Karolien Jans ,  Tim Stakenborg ,  Frank Holsteyns

IPC: B01L3/00 ,  G11C13/00

Abstract: The disclosed technology generally relates to storing data, and more particularly relates to a method of storing data in a polymer, where the data comprises a sequence of bits. In one aspect, the method comprises receiving a sequence of bits to be stored and providing a group of different homo-bifunctional monomers. Each homo-bifunctional monomer comprises a core structure having identical functional groups attached at two different positions of the core structure. The group of different homo-bifunctional monomers comprises homo-bifunctional monomers having at least two different core structures. The method further comprises linking the different homo-bifunctional monomers together to form the polymer having a sequence of monomer core structures representing the sequence of bits to be stored. The different homo-bifunctional monomers are linked together using a click chemistry reaction between the functional groups of the different homo-bifunctional monomers. The present disclosure further relates to a synthesis system for performing the method.

公开(公告)号：US11031253B2

公开(公告)日：2021-06-08

申请号：US16574902

申请日：2019-09-18

Applicant: IMEC VZW

Inventor： Quoc Toan Le ,  Henricus Philipsen ,  Frank Holsteyns

IPC: H01L21/3213 ,  H01L21/311

Abstract: A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.