公开(公告)号：US11656128B2

公开(公告)日：2023-05-23

申请号：US17729884

申请日：2022-04-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chin-Jou Kuo ,  Bor-Shiun Lee ,  Ming-Fa Chen

IPC: G01J5/20 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01J5/20 ,  B81B3/0072 ,  B81C1/00666 ,  B81B2201/0278 ,  B81B2203/04 ,  B81C2201/0104 ,  B81C2201/0107

Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.