公开(公告)号：US11359970B2

公开(公告)日：2022-06-14

申请号：US16904820

申请日：2020-06-18

Applicant: Industrial Technology Research Institute

Inventor： Bor-Shiun Lee ,  Ming-Fa Chen ,  Ying-Che Lo ,  Chao-Ta Huang

IPC: G01J5/02 ,  G01J5/20 ,  H01L31/09

Abstract: A microelectromechanical infrared sensing apparatus includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stoppers. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate, and each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact both the substrate and the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

公开(公告)号：US11820650B2

公开(公告)日：2023-11-21

申请号：US16882039

申请日：2020-05-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Bor-Shiun Lee ,  Ming-Fa Chen ,  Yu-Wen Hsu ,  Chao-Ta Huang

IPC: B81B7/02 ,  B81C1/00 ,  G01L19/00 ,  G01K7/18 ,  G01N27/22

CPC classification number: B81B7/02 ,  B81C1/00246 ,  G01K7/186 ,  G01L19/0092 ,  G01N27/223 ,  B81B2201/0264 ,  B81B2201/0278

Abstract: The disclosure relates to a microelectromechanical apparatus including a substrate, a stationary electrode, a movable electrode, and a heater. The substrate includes an upper surface, an inner bottom surface, and an inner side surface. The inner side surface surrounds and connects with the inner bottom surface. The inner side surface and the inner bottom surface define a recess. The stationary electrode is disposed on the inner bottom surface. The movable electrode covers the recess. The movable electrode, the inner bottom surface, and the inner side surface define a hermetic chamber. The heater is disposed on the movable electrode and located above the hermetic chamber.

公开(公告)号：US11965852B2

公开(公告)日：2024-04-23

申请号：US17719342

申请日：2022-04-12

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Chi Kuo ,  Bor-Shiun Lee ,  Ming-Fa Chen

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N27/128 ,  G01N33/0062

Abstract: A microelectromechanical sensor includes a base, a heater provided on the base, and a sensing electrode including a sensing portion. The heater includes a heating portion. The heater and the sensing electrode are provided at different layers in a stacking direction, and the sensing electrode is electrically insulated from the heater. On a reference plane in the stacking direction, a projection of the sensing portion of the sensing electrode is entirely covered by a projection of the heating portion of the heater.

公开(公告)号：US11656128B2

公开(公告)日：2023-05-23

申请号：US17729884

申请日：2022-04-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chin-Jou Kuo ,  Bor-Shiun Lee ,  Ming-Fa Chen

IPC: G01J5/20 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01J5/20 ,  B81B3/0072 ,  B81C1/00666 ,  B81B2201/0278 ,  B81B2203/04 ,  B81C2201/0104 ,  B81C2201/0107

Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

公开(公告)号：US11366015B1

公开(公告)日：2022-06-21

申请号：US17240077

申请日：2021-04-26

Applicant: Industrial Technology Research Institute

Inventor： Bor-Shiun Lee ,  Ming-Fa Chen

IPC: G01J5/02 ,  B81B3/00 ,  G01J5/20

Abstract: A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.