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    WATER-DISPERSIBLE NANOPARTICLES HAVING HIGH LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME
    5.
    发明申请
    WATER-DISPERSIBLE NANOPARTICLES HAVING HIGH LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME 有权
    具有高照度效能的水分散纳米颗粒及其生产方法

    公开(公告)号：US20090315446A1

    公开(公告)日：2009-12-24

    申请号：US12427138

    申请日：2009-04-21

    申请人： Norio MURASE ,  Chunliang LI ,  Masanori ANDO

    发明人： Norio MURASE ,  Chunliang LI ,  Masanori ANDO

    IPC分类号： H01J1/62 ,  C23C18/14 ,  B32B5/02 ,  C09K11/08 ,  C09K11/56 ,  C09K11/54 ,  C09K11/70

    CPC分类号： C09K11/70 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C23C18/122 ,  C23C18/1254 ,  C23C18/14 ,  Y10S977/778 ,  Y10S977/815 ,  Y10S977/816 ,  Y10S977/818 ,  Y10S977/819 ,  Y10S977/82 ,  Y10S977/826 ,  Y10S977/834 ,  Y10T428/268

    摘要： The present invention provides nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles comprising bringing a dispersion of III-V semiconductor nanoparticles in an organic solvent into contact with an aqueous solution of a Group II element-containing compound and a Group VI element-containing compound to thereby transfer the III-V semiconductor nanoparticles of the organic solvent dispersion to the aqueous solution, and then irradiating the aqueous solution with light; and a method of producing a glass matrix having the nanoparticles dispersed therein.The present invention provides III-V semiconductor nanoparticles having a high photoluminescence efficiency in an aqueous solution, and a method of producing the nanoparticles. The invention further provides a fluorescent material with high PL efficiency containing the III-V semiconductor nanoparticles retained in a glass matrix, a method of producing the fluorescent material, and a light-emitting device containing the fluorescent material.

    摘要翻译： 本发明提供具有由包含III族元素和V族元素的芯组成的核/壳结构的纳米颗粒，其中III族元素与V族元素的摩尔比在1.25至3.0的范围内，壳体 包含II族元素和VI族元素，并且具有0.2nm至4nm的厚度，所述纳米颗粒的光致发光效率为10％以上，直径为2.5〜10nm; 制备水分散性纳米颗粒的方法包括使III-V族半导体纳米颗粒在有机溶剂中的分散体与含有II族元素的化合物和含VI族元素的化合物的水溶液接触，从而将III -V半导体纳米颗粒的有机溶剂分散到水溶液中，然后用光照射水溶液; 以及制备其中分散有纳米颗粒的玻璃基质的方法。 本发明提供了在水溶液中具有高光致发光效率的III-V族半导体纳米粒子，以及制造纳米粒子的方法。 本发明还提供一种含有保留在玻璃基质中的III-V族半导体纳米粒子的PL效率高的荧光材料，荧光材料的制造方法以及含有荧光体的发光元件。

    Formation of nanowhiskers on a substrate of dissimilar material
    7.
    发明授权
    Formation of nanowhiskers on a substrate of dissimilar material 有权
    在不同材料的基材上形成纳米晶须

    公开(公告)号：US07528002B2

    公开(公告)日：2009-05-05

    申请号：US11165126

    申请日：2005-06-24

    申请人： Lars Ivar Samuelson ,  Thomas M. I. Martensson

    发明人： Lars Ivar Samuelson ,  Thomas M. I. Martensson

    IPC分类号： H01L21/205

    CPC分类号： C30B11/12 ,  B82Y30/00 ,  C30B25/005 ,  C30B29/40 ,  C30B29/48 ,  C30B29/60 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L33/0066 ,  Y10S977/762 ,  Y10S977/815 ,  Y10S977/89 ,  Y10S977/891

    摘要： A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature.

    摘要翻译： 在硅衬底上形成例如III-V族半导体材料的纳米晶须的方法包括：通过HF蚀刻来制备硅衬底的表面，包括钝化衬底表面，使得衬底表面基本上原子上平坦 。 基底表面上的催化颗粒由气溶胶沉积; 将基板退火; 并且用于MOVPE工艺的气体被引入到衬底周围的气氛中，使得纳米晶须通过VLS机制生长。 在生长的纳米晶须中，将基板的晶体方向转移到纳米晶须的基部并与基板表面相邻的外延晶体平面。 光学活性材料的一段可以形成在纳米晶须内并且由异质结界定，以便产生量子阱，其中量子阱的高度远大于室温下的热能，由此该段的发光特性保持 恒定，不会从低温至室温淬火。

    Process For the Production of Inp Fine Particles and Inp Fine Particle Dispersion Obtained by the Process
    8.
    发明申请
    Process For the Production of Inp Fine Particles and Inp Fine Particle Dispersion Obtained by the Process 失效
    用于生产由该方法获得的Inp微粒和Inp微粒分散的方法

    公开(公告)号：US20080199381A1

    公开(公告)日：2008-08-21

    申请号：US11666227

    申请日：2006-03-10

    申请人： Shuzo Tokumitsu

    发明人： Shuzo Tokumitsu

    IPC分类号： C01B25/00

    CPC分类号： C09K11/70 ,  C01B25/087 ,  Y10S977/813 ,  Y10S977/815 ,  Y10S977/816 ,  Y10S977/818 ,  Y10S977/819 ,  Y10S977/82 ,  Y10S977/823 ,  Y10S977/824 ,  Y10S977/896

    摘要： The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In—P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.

    摘要翻译： 本发明提供了一种工业上有利地在短时间内有效地生产具有纳米尺寸的InP微粒和InP微粒分散体的方法，并且提供了一种通过使 在含有两种或更多种In化合物的原料中含有至少一种P化合物的In化合物在该方法中使用的溶剂中，作为所述两种或更多种In化合物，具有至少一种具有与官能团反应的基团的第一In化合物 具有与形成In-P键时被官能团除去的In原子相邻的P原子的P化合物组以及化合物中比所述第一化合物具有较低电子密度的In原子的至少一种In化合物 在化合物和路易斯碱溶剂中作为所述溶剂，并通过该方法获得的InP微粒。

    SPIN-POLARIZED ELECTRON SOURCE AND SPIN-POLARIZED SCANNING TUNNELING MICROSCOPE
    9.
    发明申请
    SPIN-POLARIZED ELECTRON SOURCE AND SPIN-POLARIZED SCANNING TUNNELING MICROSCOPE 有权
    旋转极化电子源和旋转极化扫描隧道显微镜

    公开(公告)号：US20080073554A1

    公开(公告)日：2008-03-27

    申请号：US11559842

    申请日：2006-11-14

    申请人： WEN-HUI DUAN ,  SHAO-GANG HAO ,  GANG ZHOU ,  JIAN WU ,  BING-LIN GU

    发明人： WEN-HUI DUAN ,  SHAO-GANG HAO ,  GANG ZHOU ,  JIAN WU ,  BING-LIN GU

    IPC分类号： H01T23/00

    CPC分类号： H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

    摘要： An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

    摘要翻译： 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。