公开(公告)号：US20140370689A1

公开(公告)日：2014-12-18

申请号：US14096390

申请日：2013-12-04

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yi-Tsung PAN ,  Mu-Jen YOUNG

IPC: C23C16/44 ,  H01L21/02

CPC classification number: C23C16/4412 ,  C23C16/45508 ,  C23C16/4584 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.

Abstract translation: 公开了用于化学气相沉积的反应装置。 反应装置包括室，基座，入口管单元和出口管。 基座设置在室内。 入口管单元包括水平地面对基座的周边区域的多个供给开口，以将至少一个反应气体输入到室中。 引导至少一个反应气体从基座的周边区域和基座的表面移动以到达基座的中心。 出口管包括排出口，该排出口的位置对应于基座的中心，以便将流过基座中心的反应气体排出室外。