公开(公告)号：US20230207386A1

公开(公告)日：2023-06-29

申请号：US18065260

申请日：2022-12-13

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Mao-Nan CHANG ,  Ta-Ching HSIAO ,  Kuo-Lun HUANG ,  Pei-Ying CHEN

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/76825 ,  H01L21/02167 ,  H01L21/0231 ,  H01L29/1608

Abstract: A method of increasing the resistivity of a silicon carbide wafer includes providing a silicon carbide wafer with a first resistivity, and applying a microwave to treat the silicon carbide wafer. The treated silicon carbide wafer has a second resistivity. The second resistivity is higher than the first resistivity. The microwave treated silicon carbide wafer can be applied in a high-frequency device.