公开(公告)号：US20210275965A1

公开(公告)日：2021-09-09

申请号：US17327131

申请日：2021-05-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Kuo-Lun HUANG ,  Mu-Hsi SUNG ,  Keng-Yang CHEN ,  Li-Duan TSAI

IPC: B01D53/46 ,  C01B32/984 ,  C01B35/02 ,  C01B32/97 ,  C01B32/20 ,  B01J3/00 ,  B01J8/02 ,  B01J8/00

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

公开(公告)号：US20210139330A1

公开(公告)日：2021-05-13

申请号：US16729065

申请日：2019-12-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Mu-Hsi SUNG ,  Kuo-Lun HUANG

IPC: C01B32/05 ,  C01B32/963 ,  C01B32/97

Abstract: A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.

公开(公告)号：US20230207386A1

公开(公告)日：2023-06-29

申请号：US18065260

申请日：2022-12-13

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Mao-Nan CHANG ,  Ta-Ching HSIAO ,  Kuo-Lun HUANG ,  Pei-Ying CHEN

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/76825 ,  H01L21/02167 ,  H01L21/0231 ,  H01L29/1608

Abstract: A method of increasing the resistivity of a silicon carbide wafer includes providing a silicon carbide wafer with a first resistivity, and applying a microwave to treat the silicon carbide wafer. The treated silicon carbide wafer has a second resistivity. The second resistivity is higher than the first resistivity. The microwave treated silicon carbide wafer can be applied in a high-frequency device.

公开(公告)号：US20190176085A1

公开(公告)日：2019-06-13

申请号：US15854375

申请日：2017-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Kuo-Lun HUANG ,  Mu-Hsi SUNG ,  Keng-Yang CHEN ,  Li-Duan TSAI

IPC: B01D53/46 ,  C01B35/02 ,  C01B32/984

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.