公开(公告)号：US20150129025A1

公开(公告)日：2015-05-14

申请号：US14163259

申请日：2014-01-24

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yu-Hung CHEN ,  Jun-Chin LIU ,  Yung-Tsung LIU ,  Chen-Cheng LIN

IPC: H01L31/077

CPC classification number: H01L31/0747 ,  H01L31/02167 ,  Y02E10/541

Abstract: A HIT solar cell is provided, including a p-type crystalline silicon substrate having a light-receiving surface, a first intrinsic amorphous silicon thin-film layer formed on the light-receiving surface of the p-type crystalline silicon substrate, an n-type amorphous oxide layer formed on the first intrinsic amorphous silicon thin-film layer, and a first transparent conductive layer formed on the n-type amorphous oxide layer. In the HIT solar cell, the n-type amorphous oxide layer can be directly formed, without forming the first intrinsic amorphous silicon thin-film layer, and the n-type amorphous oxide layer can be divided into an n−-type amorphous oxide layer and an n+-type amorphous oxide layer that are formed sequentially.

Abstract translation: 提供了一种HIT太阳能电池，其包括具有受光面的p型晶体硅基板，形成在p型晶体硅基板的受光面上的第一本征非晶硅薄膜层， 形成在第一本征非晶硅薄膜层上的非晶氧化物层，以及形成在n型非晶氧化物层上的第一透明导电层。 在HIT太阳能电池中，可以直接形成n型非晶氧化物层，而不形成第一本征非晶硅薄膜层，并且n型非晶氧化物层可以分为n型非晶氧化物层 和n +型非晶氧化物层。