HIT SOLAR CELL
    1.
    发明申请
    HIT SOLAR CELL 审中-公开
    HIT太阳能电池

    公开(公告)号:US20150129025A1

    公开(公告)日:2015-05-14

    申请号:US14163259

    申请日:2014-01-24

    CPC classification number: H01L31/0747 H01L31/02167 Y02E10/541

    Abstract: A HIT solar cell is provided, including a p-type crystalline silicon substrate having a light-receiving surface, a first intrinsic amorphous silicon thin-film layer formed on the light-receiving surface of the p-type crystalline silicon substrate, an n-type amorphous oxide layer formed on the first intrinsic amorphous silicon thin-film layer, and a first transparent conductive layer formed on the n-type amorphous oxide layer. In the HIT solar cell, the n-type amorphous oxide layer can be directly formed, without forming the first intrinsic amorphous silicon thin-film layer, and the n-type amorphous oxide layer can be divided into an n−-type amorphous oxide layer and an n+-type amorphous oxide layer that are formed sequentially.

    Abstract translation: 提供了一种HIT太阳能电池,其包括具有受光面的p型晶体硅基板,形成在p型晶体硅基板的受光面上的第一本征非晶硅薄膜层, 形成在第一本征非晶硅薄膜层上的非晶氧化物层,以及形成在n型非晶氧化物层上的第一透明导电层。 在HIT太阳能电池中,可以直接形成n型非晶氧化物层,而不形成第一本征非晶硅薄膜层,并且n型非晶氧化物层可以分为n型非晶氧化物层 和n +型非晶氧化物层。

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